Nanoporous Ge electrode as a template for nano-sized ( &lt; 5 nm) Au aggregates

Impellizzeri, G.; Romano, Lucia; Scavetta, Erika; Ruffino, F.; Bongiorno, Corrado; Grimaldi, Maria Grazia

doi:10.1088/0957-4484/23/39/395604

Cited by 13 publications

(18 citation statements)

References 53 publications

(73 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recent work by Impellizzeri et al 60 studied the electrical properties of nanostructured Ge and revealed that the nanostructured morphology has unusually high electrical conductivity as compared with the crystalline and nonporous amorphous counterparts. In conjunction with the very large surface area to volume ratio, this makes the nanostructured morphology attractive for a variety of applications.…”

Section: Applications Of the Nanostructured Morphologymentioning

confidence: 99%

Nanostructured germanium prepared via ion beam modification

Rudawski

Jones

2013

J. Mater. Res.

View full text Add to dashboard Cite

Nanostructured" germanium (Ge; also known as "voided," "porous," "nanoporous," "cratered," and "honeycomb" Ge) created via ion beam modification has been studied for many years. This work reviews the progress made in studying and characterizing the nanostructured morphology, particularly via the use of experimental techniques such as scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Specifically, the empirical observations of the structural evolution of Ge as a function of ion beam modification conditions are discussed with added emphasis placed on quantification of the microstructure. The experimental observations and microstructure quantification are further discussed in terms of the implications for proposed formation mechanisms of the nanostructured morphology. Potential uses of the nanostructured morphology in chemical sensor and energy storage applications and suggested future lines of research to further the fundamental understanding of nanostructuring in Ge using ion beam modification are also presented.

show abstract

Section: Applications Of the Nanostructured Morphologymentioning

confidence: 99%

Nanostructured germanium prepared via ion beam modification

Rudawski

Jones

2013

J. Mater. Res.

View full text Add to dashboard Cite

show abstract

“…In addition, previous studies demonstrate that these porous Ge show enhanced conductivity and excellent transport properties 13 .…”

Section: Discussionmentioning

confidence: 96%

“…The thin film sample geometry and the deposition conditions are summarized in in fig.1. The formation of nanostructured porous Ge was reported to occur during implantation of Ge at room temperature (RT) with several heavy ions 12,13,14 . The resulting in-depth damage distribution consists of a porous amorphized Ge layer lying on a continuous amorphous layer.…”

Section: Methodsmentioning

confidence: 99%

“…A porous amorphous layer, lying on a continuous amorphous layer, is obtained on top of crystalline bulk Ge. Further details and characterization studies of bulk nanoporous samples have been published elsewhere 13,14,15,16 . 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 A further set of samples has been prepared in order to study the possible effect of ion induced damage in the samples, whose characteristics are reported in the supporting information.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Optical Properties of Nanoporous Germanium Thin Films

Cavalcoli

Impellizzeri

Romano

et al. 2015

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

In the present article we report enhanced light absorption, tunable size-dependent blue shift, and efficient electron-hole pairs generation in Ge nanoporous films (np-Ge) grown on Si. The Ge films are grown by sputtering and molecular beam epitaxy; subsequently, the nanoporous structure is obtained by Ge+ self-implantation. We show, by surface photovoltage spectroscopy measurements, blue shift of the optical energy gap and strong signal enhancement effects in the np-Ge films. The blue shift is related to quantum confinement effects at the wall separating the pore in the structure, the signal enhancement to multiple light-scattering events, which result in enhanced absorption. All these characteristics are highly stable with time. These findings demonstrate that nanoporous Ge films can be very promising for photovoltaic applications.

show abstract

“…These structures found prospective applications in anodes for electric batteries [1], solar cells [2], filters [3] and gas sensors [4]. Energetic ion irradiationinduced structural modifications such as nanohole patterns [5] or nanoporous, sponge-like structures formation in germanium [6,7] over a range of energies varying from few keV [8][9][10] to several MeV [7,11] have been studied by several groups. Steinbach et al [6] reported porous Ge formation during low-energy heavy ion irradiation of crystalline Ge (c-Ge) at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Effect of ion beam parameters on engineering of nanoscale voids and their stability under post-growth annealing

et al. 2016

View full text Add to dashboard Cite

Swift heavy ion (SHI) irradiation of damaged germanium (d-Ge) layer results in porous structure with voids aligned along ion trajectory due to local melting and resolidification during high electronic energy deposition. The present study focuses on the irradiation temperatureand incident angle-dependent growth dynamics and shape evolution of these voids due to 100 MeV Ag ions irradiation. The d-Ge layers were prepared by multiple low-energy Ar ion implantations in single crystalline Ge with damage formation of *7 displacements per atom. Further, these d-Ge layers were irradiated using 100 MeV Ag ions at two different temperatures (77 and 300 K) and three different angles (7°, 30°and 45°). After SHI irradiation, substantial volume expansion of d-Ge layer is detected which is due to formation of nanoscale voids. The volume expansion is observed to be more in the samples irradiated at 77 K as compared to 300 K at a given irradiation fluence. It is observed that the voids are of spherical shape at low ion irradiation fluence. The voids grow in size and change their shape from spherical to prolate spheroid with increasing ion fluence. The major axis of spheroid is observed to be aligned approximately along the ion beam direction which has been confirmed by irradiation at three different angles. The change in shape is a consequence of combination of compressive strain and plastic flow developed due to thermal spike generated along ion track. Post-SHI irradiation annealing shows increase in size of voids and reversal of shape from prolate spheroid towards spherical through strain relaxation. The stability of voids was studied with the effect of post-growth annealing.

show abstract

Nanoporous Ge electrode as a template for nano-sized ( < 5 nm) Au aggregates

Cited by 13 publications

References 53 publications

Nanostructured germanium prepared via ion beam modification

Nanostructured germanium prepared via ion beam modification

Optical Properties of Nanoporous Germanium Thin Films

Effect of ion beam parameters on engineering of nanoscale voids and their stability under post-growth annealing

Contact Info

Product

Resources

About