Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneity

Im, H.-J.; Ding, Yun; Pelz, J. P.; Choyke, W. J.

doi:10.1103/physrevb.64.075310

Cited by 127 publications

(96 citation statements)

References 23 publications

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“…C-V analysis considers an average SBH value (Φ CV ) over the whole interface, therefore this value is very likely to be closer to Φ 0 9,15 . Ballistic electron emission microscopy on Pd/6H-SiC barriers, has recently confirmed the presence of a nanometer scale distribution of SBH 19 , whilst conductive atomic force microscopy has also been used to map inhomogeneities on Au/4H-SiC samples 20 . The origins of inhomogeneous Schottky barrier theory dates back to the 1960's when non-linearities within the classic Richardson plot hindered the extraction of the SBH and Richardson constant (A * * ).…”

Section: Introductionmentioning

confidence: 99%

Analysis of inhomogeneous Ge/SiC heterojunction diodes

Gammon

Pérez‐Tomás

Shah

et al. 2009

Journal of Applied Physics

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In this article Schottky barrier diodes comprising of a n-n Germanium-Silicon Carbide (Ge-SiC) heterojunction are electrically characterised. Circular transmission line measurements prove that the nickel front and back contacts are ohmic, isolating the Ge/SiC heterojunction as the only contributor to the Schottky behaviour. Current-voltage plots taken at varying temperature (IVT) reveal that the ideality factor (n) and Schottky barrier height (Φ) are temperature dependent and that incorrect values of the Richardson constant (A * * ) are being produced, suggesting an inhomogeneous barrier. Techniques originally designed for metal-semiconductor SBH extraction are applied to the heterojunction results to extract values of Φ and A * * that are independent of temperature. The experimental IVT data is replicated using the Tung model. It is proposed that small areas, or patches, making up only 3% of the total contact area will dominate the I-V results due to their low SBH of 1.033 eV. The experimental IVT data is also analysed statistically using the extracted values of Φ to build up a Gaussian distribution of barrier heights, including the standard deviation and a mean SBH of 1.126 eV, which should be analogous to the SBH extracted from capacitance-voltage (C-V) measurements. Both techniques yield accurate values of A * * for SiC. However, the C-V analysis did not correlate with the mean SBH as expected.

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Section: Introductionmentioning

confidence: 99%

Analysis of inhomogeneous Ge/SiC heterojunction diodes

Gammon

Pérez‐Tomás

Shah

et al. 2009

Journal of Applied Physics

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“…The presence of an interfacial layer at the metalsemiconductor structures plays an important role in the determination of the characteristic parameters of the devices [1,2]. Amorphous silicon carbide has been extensively studied over this decade mainly in the Schottky diode.…”

Section: Introductionmentioning

confidence: 99%

Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice

et al. 2016

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“…The averaging of multiple spectra with different onsets causes the average spectra to deviate from the linearity near the threshold and results in a fit to a Schottky barrier that is lower than the mean of the distribution, which is calculated from the fits to individual spectra. A symmetric Gaussian-like distribution is expected in barrier heights for metal semiconductor systems arising from variations in the interface structure where models based on interface dipoles have predicted this behaviour and have been observed with BEEM [94,58]. This is partially the cause of the wider distributions of the e-beam samples as the incompletely-formed silicide would have larger variations in stoichiometry and structure at the interface, resulting in a broadening of the distribution of barrier heights.…”

Section: Discussionmentioning

confidence: 99%

Nanoscale Schottky barrier visualization utilizing computational modeling and ballistic electron emission microscopy

Nolting

Durcan

Gassner

et al. 2018

Journal of Applied Physics

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The electrostatic barrier at a metal semiconductor interface is visualized using nanoscale spatial and meV energetic resolution. A combination of Schottky barrier mapping with ballistic electron emission microscopy and computational modeling enables extraction of the barrier heights, the hot electron scattering, and the presence of localized charges at the interface from the histograms of the spectra thresholds. Several metal semiconductor interfaces are investigated including W/Si(001) using two different deposition techniques, Cr/Si(001), and mixed Au-Ag/Si(001). The findings demonstrate the ability to detect the effects of partial silicide formation in the W and Cr samples and the presence of two barrier heights in intermixed Au/Ag films upon the electrostatic barrier of a buried interface with nanoscale resolution. This has potential to transform the fundamental understanding of the relationship between electrostatic uniformity and interface structure for technologically important metal semiconductor interfaces.

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Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneity

Cited by 127 publications

References 23 publications

Analysis of inhomogeneous Ge/SiC heterojunction diodes

Analysis of inhomogeneous Ge/SiC heterojunction diodes

Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice

Nanoscale Schottky barrier visualization utilizing computational modeling and ballistic electron emission microscopy

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