Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice

Kaci, S.; Keffous, A.; Bozetine, I.; Trari, M.; Fellahi, O.

doi:10.12693/aphyspola.130.463

Cited by 3 publications

(2 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 4 depicts the diffuse reflectance spectrum where (F (R)E) 1/2 versus E is plotted and the band gap energy estimated is 3.05 eV approximately corresponds to 406 nm of wavelength. This band gap energy is closer to the band gap energy of the SiC of polytype 6H-SiC [16,17]. This justifies the use of 365 nm (3.47 eV) UV light as incident radiation for 6H-SiC in our study which is capable of promoting the electron from the valance to conduction band and thereby triggering photoreduction process.…”

Section: Characterization Of Catalyst Semiconductor Materialssupporting

confidence: 63%

Photochemical Conversion of CO₂into Methyl Alcohol Using SiC Micropowder under UV Light

et al. 2017

Self Cite

View full text Add to dashboard Cite

In our study, microparticles SiC powder was investigated as a catalyst for CO2 photoreduction into methanol under UV light. The photochemical conversion of methanol was studied as function of time of exposition, the concentration and the grain size of the catalyst. The selectivity of the used catalyst to promote methanol formation was noticed. It was noticed also that the grain size and concentration have a great impact on the photochemical conversion of CO2 to methanol. The best yield of methanol was achieved when a concentration of 0.75 M of SiC powder of 17 µm grain size and an exposure time to UV light of 2 h where assured. Maximum molar concentration of methanol achieved was under UV irradiation of 365 nm. Therefore, the catalytic property of silicon carbide has proved its efficiency in the photochemical conversion of CO2 into alcohol thus far under UV light.

show abstract

Section: Characterization Of Catalyst Semiconductor Materialssupporting

confidence: 63%

Photochemical Conversion of CO₂into Methyl Alcohol Using SiC Micropowder under UV Light

et al. 2017

Self Cite

View full text Add to dashboard Cite

show abstract

“…The performance and stability of MS is of great importance for the electronic devices [4][5][6]. MS contacts have an important role in the development of semiconductor industry, due to their applications in various electronic and optoelectronic devices [7].…”

Section: Introductionmentioning

confidence: 99%

The Role of Hydrostatic Pressure in Electrical Properties of Au/n-GaAs Schottky diodes with Substituted Polyaniline Interfacial Layer

et al. 2017

View full text Add to dashboard Cite

Au/polymer P2ClAn(H3BO3)/n-GaAs Schottky barrier diodes, where P2ClAn stands for poly(2-chloroaniline), have been fabricated. To fabricate Schottky diodes with polymer interface, n-type GaAs wafer was used. The P2ClAn polymer solution was applied on the front face of the n-GaAs wafer by a pipette. The P2ClAn emeraldine salt was chemically synthesized by using boric acid (H3BO3). Schottky diode parameters, such as ideality factor, barrier height and series resistance have been measured, as functions of hydrostatic pressure, using the current-voltage technique. The ideality factor values of Au/P2ClAn/n-GaAs Schottky barrier diodes have decreased from 3.38 to 3.01, the barrier height has increased from 0.653 to 0.731 eV at 0.36 kbar and series resistances were ranging from 14.95 to 14.69. The results obtained from I − V characteristics of Au/P2ClAn/n-GaAs Schottky barrier diodes show that pressure treatment improves the rectifying properties of the diodes. These diodes can be used as pressure-sensitive capacitors, due to pressure-dependence of diode parameters.

show abstract

Structural properties of Urfa stone doped with erbium oxide

et al. 2018

View full text Add to dashboard Cite

Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice

Cited by 3 publications

References 21 publications

Photochemical Conversion of CO₂into Methyl Alcohol Using SiC Micropowder under UV Light

Photochemical Conversion of CO₂into Methyl Alcohol Using SiC Micropowder under UV Light

The Role of Hydrostatic Pressure in Electrical Properties of Au/n-GaAs Schottky diodes with Substituted Polyaniline Interfacial Layer

Structural properties of Urfa stone doped with erbium oxide

Contact Info

Product

Resources

About

Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice

Cited by 3 publications

References 21 publications

Photochemical Conversion of CO2into Methyl Alcohol Using SiC Micropowder under UV Light

Photochemical Conversion of CO2into Methyl Alcohol Using SiC Micropowder under UV Light

The Role of Hydrostatic Pressure in Electrical Properties of Au/n-GaAs Schottky diodes with Substituted Polyaniline Interfacial Layer

Structural properties of Urfa stone doped with erbium oxide

Contact Info

Product

Resources

About

Photochemical Conversion of CO₂into Methyl Alcohol Using SiC Micropowder under UV Light

Photochemical Conversion of CO₂into Methyl Alcohol Using SiC Micropowder under UV Light