Nanometer patterning of epitaxial CoSi2/Si(100) for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistors

Zhao, Qing‐Tai; Klinkhammer, F.; Dolle, M.; Kappius, L.; Mantl, S.

doi:10.1063/1.123059

Cited by 37 publications

(23 citation statements)

References 9 publications

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“…While earlier devices exhibited low drive currents [6,7], recent experimental research has focused on either device fabrication or operation at low temperatures [8][9][10]. Other researchers have successfully used SiGe as the source/drain [11], or concentrated on silicon-on-insulator (SOI) devices [12,13].…”

Section: Introductionmentioning

confidence: 99%

Subthreshold and scaling of PtSi Schottky barrier MOSFETs

Calvet

Luebben

Reed

et al. 2000

Superlattices and Microstructures

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We examine the subthreshold behavior of metal oxide semiconductor field effect transistors (MOSFETs) with Schottky barrier (SB) source/drain and large on/off ratios. Thermionic emission dominates the drain current versus gate voltage curves and the sharp turn on is attributed to a decrease in the effective hole barrier with gate bias. We present a simple 1D model and find excellent agreement between the experimentally determined effective barriers and the calculated results. Smaller devices exhibit significantly degraded characteristics, which are attributed to a sub-surface punch-through of the source and drain depletion widths at zero gate bias. Implications for SBMOSFETs are discussed.

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Section: Introductionmentioning

confidence: 99%

Subthreshold and scaling of PtSi Schottky barrier MOSFETs

Calvet

Luebben

Reed

et al. 2000

Superlattices and Microstructures

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“…Feature sizes of useful components in microelectromechanical systems ͑MEMS͒ 2,3 and electronic devices 3 are becoming smaller, reaching nanometer ranges. [3][4][5] Their large surface-to-volume ratios make the components more susceptible to environmental effects. For example, a MEMS-based mechanical testing 6 has shown the existence of fatigue ͑i.e., crack growth under repeated subcritical loading͒ at a submicron-sized crack in Si, although there is no fatigue in bulk Si.…”

Section: Introductionmentioning

confidence: 99%

Environmental effects of H2O on fracture initiation in silicon: A hybrid electronic-density-functional/molecular-dynamics study

Ogata

Shimojo

Kalia

et al. 2004

Journal of Applied Physics

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A hybrid quantum-mechanical/molecular-dynamics simulation is performed to study the effects of environmental molecules on fracture initiation in silicon. A (110) crack under tension (mode-I opening) is simulated with multiple H2O molecules around the crack front. Electronic structure near the crack front is calculated with density functional theory. To accurately model the long-range stress field, the quantum-mechanical description is embedded in a large classical molecular-dynamics simulation. The hybrid simulation results show that the reaction of H2O molecules at a silicon crack tip is sensitive to the stress intensity factor K. For K=0.4 MPa⋅m, an H2O molecule either decomposes and adheres to dangling-bond sites on the crack surface or oxidizes Si, resulting in the formation of a Si–O–Si structure. For a higher K value of 0.5 MPa⋅m, an H2O molecule either oxidizes or breaks a Si–Si bond.

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“…Schottky-barrier MOSFET (SB-MOSFET) offers an alternative device technology to minimize parasitic S/D resistances and eliminate the need for ultra-shallow junctions [1][2][3][4][5][6][7][8][9]. The characteristics of nano scale SB-MOSFETs based on ballistic simulation and constant effective mass approximation have been reported [10,11].…”

Section: Introductionmentioning

confidence: 99%

High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs

Liu

Han

2011

Sci. China Inf. Sci.

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The high frequency performances of nano-scale ultra-thin-body (UTB) Schottky-barrier nMOSFETs (SB-nMOSFETs) are investigated using 2D full-band self-consistent ensemble Monte Carlo method. The UTB SB-nMOSFET devices offer excellent RF performance with high values of f T and fmax. The significant dependence of f T and fmax on gate voltage and weak dependence on barrier height are demonstrated. Meanwhile, the significant dependence of gm and g ds on both gate voltage and SB height are shown. Moreover, the scalability of f T is outstanding and close to the ideal case (f T ∝ 1/L 2 g ). The high frequency performances of 45 nm channel length SB-nMOSFETs at ballistic transport limit are also investigated. Results show that scattering strongly affects the capacitances Cgs, C gd and C ds . At ballistic transport limit the f T and fmax are almost 10 times larger. The Scattering effects in nano-scale SB-nMOSFETs cannot be neglected.Keywords Monte Carlo, ultra thin body (UTB), Schottky-barrier MOSFETs (SB-MOSFETs), high frequency CitationDu G, Liu X Y, Han R Q. High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs.

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Nanometer patterning of epitaxial CoSi2/Si(100) for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistors

Cited by 37 publications

References 9 publications

Subthreshold and scaling of PtSi Schottky barrier MOSFETs

Subthreshold and scaling of PtSi Schottky barrier MOSFETs

Environmental effects of H2O on fracture initiation in silicon: A hybrid electronic-density-functional/molecular-dynamics study

High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs

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