NanoImprint Lithography

Landis, S.

doi:10.1002/9781118622582.ch2

Cited by 10 publications

(10 citation statements)

References 137 publications

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“…9,10 Thus, the exposure latitude (EL) and the depth-of-focus (DoF) parameters are derived defining the maximum allowable variation or range of exposure dose and focus, respectively, that can be tolerated before the printed pattern dimension falls outside the specification. 9,10 Thus, the exposure latitude (EL) and the depth-of-focus (DoF) parameters are derived defining the maximum allowable variation or range of exposure dose and focus, respectively, that can be tolerated before the printed pattern dimension falls outside the specification.…”

Section: Introductionmentioning

confidence: 99%

Contact holes patterning by directed self-assembly of block copolymers: process window study

Gharbi

Tiron

Argoud

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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Contact hole (CH) patterning by directed self-assembly (DSA) of polystyrene-b-polymethylmethacrylate (PS-b-PMMA) block copolymers (BCPs) is extensively studied. Based on statistical analysis of defectivity and CD measurements after DSA, a process window (PW) for CH shrink is experimentally determined as a function of guiding pattern dimensions and BCP molecular weights corresponding to BCP natural periods. This PW permits to define the suitable BCP molecular weight and the best guiding CD ranges required to achieve a desired DSA hole CD within a specific tolerance. As an example, for a DSA hole CD targeted at 19.5 nm with 10% tolerance, circular guiding patterns of 52 nm CD with 20% guiding CD latitude are needed using a 35-nmnatural-period cylindrical BCP. Furthermore, it is shown that the CH shrink PW is also dependent on the guiding pattern density and the DSA process conditions such as the self-assembly annealing and the spin coating conditions. The study also highlights an interesting property of commensurability between guiding pattern dimensions and BCP's natural period that governs the DSA CH patterning for both CH shrink and CH doubling configurations. This permits one to predict the guiding pattern dimensions needed for CH patterning by DSA using a given BCP of known natural period.

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Section: Introductionmentioning

confidence: 99%

Contact holes patterning by directed self-assembly of block copolymers: process window study

Gharbi

Tiron

Argoud

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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“…where the dimensionless parameters are the capillary number η γ = h t Ca 0 0 (16) and the Deborah number τ = t De t (17) Critical Viscoelastic Wavelength. The damping factor in eq 15 has two asymptotic limits.…”

Section: ■ Introductionmentioning

confidence: 99%

Viscoelastic Leveling of Annealed Thin Polystyrene Films

2014

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Theoretical and experimental work on nanoscale viscoelastic flows of polystyrene melts is presented. The reflow above the glass transition temperature (T(g)) of a continuous patterned film is characterized. Attention is paid to the topographical consequences of the flow rather than to the temporal description of the leveling of the film. In the framework of capillary wave theory, it is shown that only the shortest spatial wavelengths of the topography exhibit an elastic behavior, while long waves follow a viscous decay. The threshold wavelength depends on the surface tension, on the elastic plateau modulus, and, for ultrathin films, on the film thickness. Besides, for polystyrene, this threshold is a nanoscale parameter and weakly depends on the temperature of annealing. Experiments are conducted on polystyrene 130 kg/mol submicrometer films. The samples are embossed using thermal nanoimprint technology and then annealed at different temperatures between T(g) + 10 °C and T(g) + 50 °C. The smoothed topographies of the films are measured by atomic force microscopy and compared to a single-mode Maxwell leveling model and a more elaborated model based on reptation theory.

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“…This is possible by using sole or additional surface profiles rather than only small apertures in the mask. With request for surface profiles and small features, large structured areas and partly multiple lithography layers altogether, the fabrication of diffractive photomasks is challenging but can be addressed with state-of-the-art direct-write lithography [73,74] and etching [121] techniques.…”

Section: Photomask Technologymentioning

confidence: 99%

“…pulse compression gratings in an ultra-fast laser or a WGP in the illumination set-up of a lithography tool, superior quality and strict observation of the specified fabrication tolerances is required. This can be addressed by a component fabrication based on electronbeam lithography (EBL) [73,74,70] which allows for a very flexible maskless exposure of high resolution structures. The drawback of the technology is the sequential writing scheme of EBL, which leads to exposure times of several hours per substrate and defines a critical bottleneck for the scalability.…”

Section: Fabrication Technologiesmentioning

confidence: 99%