Nanoimprint assisted inkjet printing to fabricate sub-micron channel organic field effect transistors

Teng, Lichao; Plötner, Matthias; Türke, Alexander; Adolphi, B.; Finn, Andreas; Kirchner, Robert; Fischer, Wolf‐Joachim

doi:10.1016/j.mee.2013.02.027

Cited by 17 publications

(14 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Solution deposited contacts include PEDOT:PSS, graphene and graphene oxide, organic charge transfer complexes, carbon nanotubes, and metal nanoparticles . Printing is a scalable, inexpensive, and energy efficient technique that can be used to create electronics on flexible substrates and allows for customizable applications with similar opportunities in small scale electronic design that 3D printing has had in manufacturing .…”

Section: Printed Contacts In Ofet Devicesmentioning

confidence: 99%

“…Materials available for printed metallic components are usually set by the ability to solvent print these materials with low resistivity and high resolution, and therefore options to develop and improve contact resistance are more limited. Fukuda et al reported contact resistance in OFETs as low as 1.8 kΩ cm for inkjet printed silver nanoparticle inks treated with a SAM layer and by adding gold nanoparticles to a silver ink Teng et al were able to reduce φ B from 1.5 to 1 eV . Kostianovskii et al developed solution processed contacts using patterned PEDOT:PSS with R C = 0.98 kΩ cm in OFETs made with a copolymer of 1,4‐diketopyrrolo[3,4‐c]pyrrole (DPP) and thieno[3,2‐b]thiophene moieties (DPPT‐TT) …”

Section: Printed Contacts In Ofet Devicesmentioning

confidence: 99%

See 1 more Smart Citation

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Waldrip

Jurchescu

Gundlach

et al. 2019

Adv Funct Materials

232

261

View full text Add to dashboard Cite

Organic semiconductors have sparked interest as flexible, solution processable, and chemically tunable electronic materials. Improvements in charge carrier mobility put organic semiconductors in a competitive position for incorporation in a variety of (opto-)electronic applications. One example is the organic field-effect transistor (OFET), which is the fundamental building block of many applications based on organic semiconductors. While the semiconductor performance improvements opened up the possibilities for applying organic materials as active components in fast switching electrical devices, the ability to make good electrical contact hinders further development of deployable electronics. Additionally, inefficient contacts represent serious bottlenecks in identifying new electronic materials by inhibiting access to their intrinsic properties or providing misleading information. Recent work focused on the relationships of contact resistance with device architecture, applied voltage, metal and dielectric interfaces, has led to a steady reduction in contact resistance in OFETs. While impressive progress was made, contact resistance is still above the limits necessary to drive devices at the speed required for many active electronic components. Here, the origins of contact resistance and recent improvement in organic transistors are presented, with emphasis on the electric field and geometric considerations of charge injection in OFETs.semiconductors with superior intrinsic charge transport properties, there is a stringent need to improve the device properties in order to allow organic devices to fulfill their technological prospectives. In the organic semiconductor community, contact resistance (R C ) has come under increased scrutiny as it is apparent that the final device performance is often domi nated by carrier injection, rather than the transport through the semiconductor layer. Contact resistance can impact OFET development in multiple ways. First, if not accounted for, a high contact resistance may lead to inaccurate extraction of the device parameters. Second, any inaccuracies in parameter extraction can have significant consequences on material development, from generating incorrect structure-property relationships to discarding organic semiconductors whose efficient intrinsic electrical properties have been masked by inefficient contacts. Beyond OFET and semiconductor characterization, analog, low power, and high frequency applications require a greater level of device parameter control than has been obtained in typical DC, high-voltage OFETs. For analog applications, e.g., integration of conditioning circuits such as local sense amps for distributed flexible sensor arrays, nonlinearity of the transistor response inhibits proper functioning and limits applicability of common models used to design circuitry. Low power device development for novel materials are hindered by the high voltage turn-on and current suppression in devices with large R C . Considering high-frequency applications, Klauk suggest...

show abstract

Section: Printed Contacts In Ofet Devicesmentioning

confidence: 99%

Section: Printed Contacts In Ofet Devicesmentioning

confidence: 99%

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Waldrip

Jurchescu

Gundlach

et al. 2019

Adv Funct Materials

232

261

View full text Add to dashboard Cite

show abstract

“…Nonetheless there are technologies to further reduce inkjet nozzle sizes and thereby to bring the drop size down to a few microns, while printed transistors with channel feature sizes of several microns or even sub-micron have already been demonstrated [36][37][38][39][40][41][42]. Droplets of a smaller diameter generated with a high-resolution inkjet printer will undoubtedly diminish the maximum penetration thickness far below 5 μm and will therefore make this issue relevant to printed electronics applications.…”

Section: Resultsmentioning

confidence: 99%

A mechanism of the penetration limit for producing holes in poly(4-vinyl phenol) films by inkjet etching

Zhang¹,

Liu²,

Whalley³

2015

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

“…Nonetheless, both techniques are new and exciting ways to fabricate electronic devices. Both AJP and IJP techniques are currently used to print a wide variety of organic and inorganic inks for use as flexible photodetectors, transistors, and other circuit board components [4][5][6][7][8][9][10]. ZnO is an exciting material for electronics due to its direct wide bandgap (3.2 eV at 298 K), strong UV absorption, and electrical tunability.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Conductive Sol-Gel ZnO Films and Development of ZnO Printed Electronics

Winarski¹,

Selim²

2019

Sol-Gel Method - Design and Synthesis of New Materials With Interesting Physical, Chemical and Biological Properties

View full text Add to dashboard Cite

ZnO thin films are synthesized and studied to understand the functionality of solution-processed semiconductor devices. A simple sol-gel technique is used to fabricate transparent conductive oxides (TCOs) and ultraviolet (UV) photodetectors from ZnO precursors via spin coating, inkjet printing (IJP), and aerosol jet printing (AJP). A variety of flexible and transparent substrates was selected based on the deposition and sintering conditions and the device application. Doping of ZnO films with Al 3+ , In 3+ , and Ga 3+ was introduced in precursor solutions before deposition processes. Post-deposition processing was carried out in air, H 2 , and Zn environments to optimize thin film properties. Optical, structural, and electronic data analyses reveal the significant effects that deposition method, substrates, dopants, and processing conditions have on the optical transmission, crystallinity, grain size, and electrical conductivity.

show abstract

Nanoimprint assisted inkjet printing to fabricate sub-micron channel organic field effect transistors

Cited by 17 publications

References 20 publications

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

A mechanism of the penetration limit for producing holes in poly(4-vinyl phenol) films by inkjet etching

Synthesis of Conductive Sol-Gel ZnO Films and Development of ZnO Printed Electronics

Contact Info

Product

Resources

About