Nanoheteroepitaxy of GaN on a nanopore array Si surface

Abstract

We report the growth by molecular beam epitaxy and the optical characterization of GaN films nucleated on a Si(111) surface that has been patterned by dry etching an ordered array of nanometer-scale pores prior to the growth. The etching is performed using an anodized aluminum oxide membrane as a mask. The nanopore array surface with the pore diameter of 60 nm and periodicity of 110 nm exhibits significant effects on emissivity and the optical properties of the resulting film. Room-temperature photoluminescence intensity increases by a factor of 5 for GaN grown on nanoporous Si. Peak shifts in photoluminescence and Raman spectroscopy suggest that the material grown on nanopores may be more relaxed than films grown on flat substrates. The effects of nanopore topography on the nucleation of GaN films offer a potential path to significant improvement of III-nitride heteroepitaxy for device applications.

Near‐Infrared Light Emission from a GaN/Si Nanoheterostructure Array

“…In order to reduce the large lattice mismatch between GaN and sc -Si, one effective way is to introduce deliberately designed transitional layers between the two materials. [ 14 , 15 ] The use of nanostructures has proven to be another effective method for improving the interface quality, such as growing GaN fi lms on a Si nanopore array, [ 16 ] and GaN nanorod on Si wafers. [ 17 , 18 ] Although effective EL has not been reported in these GaN/Si nanostructures, the observed excellent rectifi cation effect indicated that high-quality heterojunctions are fomed in these GaN/ Si nanostructures.…”

Ordered Arrays of Nanostructures and Applications in High‐Efficient Nano‐Generators

“…[6,[18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] The structural parameters of the anodic alumina membranes, such as the pore diameter and spacing, can be tuned in the range of about 10-200 and 25-420 nm, respectively. Accordingly, the size and spacing of the above-mentioned three classes of nanostructures that are prepared using the alumina membranes can be adjusted in the similar size range.…”

“…[28][29][30][31][32] The UTAM is a through-hole alumina membrane with small thickness of about several hundred nanometers. It can be mounted or fabricated on substrates.…”

“…[7][8][9][10][11][12][13][14] Using a two-step replication process, metallic and semiconductor nano-porous membranes can be prepared using the alumina membranes as the original. [5,[15][16][17] Moreover, recent research concerning a surface nano-patterning technique [6,[18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] using ultra-thin alumina membranes (UTAMs) has successfully fabricated ordered arrays of surface zero-dimensional nanostructures including nanodots and nanoholes.…”

Nanopatterned Contacts to GaN

“…[12][13][14] The PAA patterned Si substrates have been employed as lateral epitaxial overgrowth templates for GaN films to reduce defect density. 14,15 Nanoscale Schottky contacts to n-Si have been found to yield a large current density that cannot be modeled as a purely thermionic emission current, 16,17 but, rather, can be explained by the enhanced tunneling due to the decrease of the Schottky barrier thickness with decreasing diode size.…”