Near‐Infrared Light Emission from a GaN/Si Nanoheterostructure Array

Morphology control of gallium nitride grown on silicon nanoporous pillar array: From cone-strings to nanowires

“…Nevertheless, GaN cone-strings were usually found to co-grow with nanowires [17][18][19][20]. This made the study on the basic properties of GaN conestrings more difficult.…”

Wavelength-tunable infrared light emitting diode based on ordered ZnO nanowire/Si1–x Ge x alloy heterojunction

“…Therefore, a marriage between ZnO and SiGe alloy could realize a new wavelength-tunable IR LED device, and has attracted increasing attention in recent years [31][32][33][34]. As is the case for other IR LED nanodevices, this novel device may have great potential applications in optical communication, environmental monitoring and biological and medical analyses [35,36]. In addition, ordered nanowires LED have better prospects than random distributed nanowires LEDs [10].…”

Preparation and Performance of Gallium Nitride Powders with Preferred Orientation

“…At the same time, an uncommon phenomenon is seen in the XRD patterns that the diffraction from (002) plans is extra strong compared with the other peaks. This result indicates that the present samples exist preferred (002) crystal plane orientation, like in the thin films [1]. After removing background of curves and fitting peaks processes, the average size of the sub-grains is rough calculated by the full width at half maximum using the Scherrer formula (t = λ/Bcosθ), as shown in Table 1; the number in parenthesis is error range.…”