Nanocrystalline SiC films prepared by direct deposition of carbon and silicon ions

Formation of high conductive nano-crystalline silicon embedded in amorphous silicon-carbide films with large optical band gap

“…15 From the view point of device application, it is highly desired to get nc-Si:SiC films with high conductivity at the suitable optical band gap (>2.5 eV) so that they can act as the window layer or the conductive layer in nano-crystalline SiC film-based optoelectronic devices without absorbing incident (or emitted) light too much. 13,16 In our previous work, hydrogenated amorphous silicon carbide (a-SiC:H) films were prepared in a plasma-enhanced chemical vapor deposition (PECVD) system. Nc-Si:SiC films were fabricated after annealing at 900 • C and 1000 • C. It was found that for samples annealed at 1000 • C, the average size of nc-Si is 9 nm and the crystallinity is reached to 70 %.…”

Effect of electron irradiation on the optical properties of nanocrystalline SiC films on single crystal Al2O3 substrates

“…Эòî îбóñëîâëåíî âы-ñîêîé êîíцåíòðàцèåé èíòåðфåéñíыõ îбëàñòåé â âèдå ãðàíèц íàíîêðèñòàëëîâ, êîòîðыå мîãóò âы-ñòóïàòь â êàчåñòâå ïîãëîòèòåëåé òîчåчíыõ дåфåê-òîâ è îбåñïåчèâàòь óñêîðåíèå èõ ðåêîмбèíàцèè [4,5]. Мàòåðèàëы íà îñíîâå íàíîêðèñòàëëèчå-ñêîãî êàðбèдà êðåмíèÿ nc-SiC ïðèâëåêàюò îñî-бîå âíèмàíèå â ñâÿзè ñ êîмïëåêñîм óíèêàëьíыõ ñâîéñòâ SiC, òàêèõ êàê âыñîêèå зíàчåíèÿ ïîðî-ãîâîé ýíåðãèè дåфåêòîîбðàзîâàíèè (25-35 ýВ) [6,7], âыñîêîòåмïåðàòóðíàÿ ñòàбèëьíîñòь, õè-мèчåñêàÿ èíåðòíîñòь è îòëèчíыå мåõàíèчåñêèå ñâîéñòâà [8,9]. Êðîмå фóíдàмåíòàëьíыõ ñâîéñòâ ñëîè nc-SiC, ïîëóчåííыå ïðÿмым èîííым îñàж-дåíèåм [10], îбëàдàюò ðÿдîм ñâîéñòâ, ñâÿзàí-íыõ ñ òàêèмè êâàíòîâымè ýффåêòàмè â íàíî-êðèñòàëëàõ, êàê àíîмàëьíî âыñîêàÿ íåëèíåé-íî îïòèчåñêàÿ âîñïðèèмчèâîñòь [11,12], êîë-ëåêòèâíыå мàãíèòíыå ñâîéñòâà [13], мíîãîñòó-ïåíчàòàÿ мåжêðèñòàëëèòíàÿ òóííåëьíàÿ ïðîâî-дèмîñòь [14].…”

Ion Synthesis of SiC and Its Instability at High Temperatures

“…Such conditions were realized in the magnetron sputtering [25,56], laser ablation [53] and plasma deposition [36], plasma-enhanced chemical vapor deposition [19,43], molecular beam epitaxy [16]. At temperatures below 1500°C in the direct deposition of carbon and silicon ions with energy of ~100 eV, the growth of nanocrystalline films with a consistent set of the polytypes 3C, 21R, 27R, 51R, 6H is possible [49,50,51].…”