Nanocomposite organic films on silicon

Malik, Syed Abdul; Ray, Asim K.; Hassan, Aseel; Nabok, Alexei

doi:10.1109/tnano.2003.817219

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Cited by 6 publications

(1 citation statement)

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“…These devices were fabricated using 40 layer thick LB films of stearic acid (SA) containing cadmium ions on hydrophobic (1 0 0) n-type silicon (n-Si) wafers as substrates. It was found that the structures exhibited improved dielectric properties of the device when CdS nanoparticles were embedded into the stearic acid matrix, leading to a significant reduction of leakage current [5]. The present work is concerned with the room temperature measurements of the 1/f noise performed on similar MIS structures at low to moderate leakage current.…”

Section: Introductionmentioning

confidence: 99%

1/fnoise in Langmuir–Blodgett films on silicon

Malik¹,

Ray²,

Bruce³

2005

Semicond. Sci. Technol.

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Low-frequency noise properties of 100 nm-thick Langmuir-Blodgett (LB) films of stearic acid in a metal-insulator-semiconductor (MIS) structure have been studied as a function of frequency and leakage current. The excess noise is found to be consistently 1/f -like within a range of frequencies between 1 Hz to 1 kHz when leakage current is varied from 10 −8 A to 10 −4 A. The sources of noises are identified; the trap density is estimated to be 3.6 × 10 18 m −2 eV −1 .

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Section: Introductionmentioning

confidence: 99%