Nano-Power CMOS Voltage Reference for RF-Powered Systems

Parisi, Alessandro; Finocchiaro, Alessandro; Papotto, Giuseppe; Palmisano, G.

doi:10.1109/tcsii.2018.2857626

Cited by 20 publications

(9 citation statements)

References 16 publications

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“…The BJT-based bandgap reference (BGR) circuits [1][2][3][4][5] are the conventional and the most popular approach to generate the reference voltage. The reference voltages are accurate and precise with very small temperature coefficients (TCs) but they require higher supply voltages and power consumption in comparison with the CMOS voltage reference circuits [6][7][8][9][10][11][12][13][14] operated in subthreshold. Owing to subthreshold, the supply voltages and the reference voltages, as well as power consumptions, can be much lower than those of the BGR circuits, while the accuracy and precision are getting close to the BGR in recent years.…”

Section: Introductionmentioning

confidence: 99%

A gate leakage current based nano-ampere current reference generator using a dual threshold voltage 6-T voltage reference

Chang¹,

Tseng²,

Lin³

et al. 2022

Jpn. J. Appl. Phys.

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To realize nano-ampere current reference generator, a tunable 1.34 nA current reference generator is proposed by applying the reference voltage to a PMOSFET achieving low temperature coefficients (TCs). Unlike the conventional resistors occupying large die area, the area was significantly reduced by using the gate-leakage PMOSFET. Furthermore, the area-efficient reference voltage based on MOSFETs operated at subthreshold rather than the accurate but power- and area-hungry bandgap reference was utilized. To cope with process variations, the reference current can be trimmed by four switches and is easy to be replicated. The proposed current generator was designed and fabricated on the die area of 0.0175 mm^2 using 90 nm CMOS technology. The measured TC of the 308 mV voltage reference is 124 ppm/°C and the measured TC of the 1.34 nA current reference is 394 ppm/°C from 0°C to 120°C at a supply voltage of 0.75V.

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Section: Introductionmentioning

confidence: 99%

A gate leakage current based nano-ampere current reference generator using a dual threshold voltage 6-T voltage reference

Chang¹,

Tseng²,

Lin³

et al. 2022

Jpn. J. Appl. Phys.

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show abstract

“…The mid-bandgap voltage reference that provides 0.570mV sacrifice power (151.1nW) to provide a voltage reference with improved line regulation (5%) and better temperature stability (40ppm/ • C) in the wide temperature range of -55 target outdoor IoT applications. In table 4.4 the main aspects of the proposed voltage reference circuits as well as the one introduced in [22] are summarized. In order to be able to have a comparison between them we have used the figure of merit (FOM) introduced by [52] as:…”

Section: Discussionmentioning

confidence: 99%

“…In low power design the current scale should be kept low. To fulfill this requirement the resistors that are used in the circuit configuration have high resistance [22]. High resistances occupy much of the chip area and increase the IC size.…”

Section: Resistor-less Design Strategymentioning

confidence: 99%

“…The circuit introduced in [22] which is realized in 0.13µm technology is adopted here in our platform with a 40nm technology to produce 570mV voltage reference which is near the mid-bandgap voltage. The circuit, excluding the charge pump, is shown in Fig.…”

Section: Mid-bandgap Voltage Reference (Mbr)mentioning

confidence: 99%

“…It is used to provide a fair assessment of their performance. According to this FOM the three voltage references are far suitable for our target applications when are compared with the one introduced in [22].…”

Section: Ripple In the Output Of Mid-bandgap Reference Voltagementioning

confidence: 99%

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