Na incorporation in Mo and CuInSe2 from production processes

Rockett, Angus; Granath, Karin; Asher, S. E.; Jassim, M. M. Al; Hasoon, Falah S.; Matson, R.; Başol, B.M.; Kapur, V. K.; Britt, J.; Gillespie, T.; Marshall, Charles A.

doi:10.1016/s0927-0248(99)00026-4

Cited by 41 publications

(20 citation statements)

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“…The diffusion of Na through the Mo back contact appears to be primarily determined by Mo oxide phases, present at grain boundaries. 94,95 However, the Na concentration inside the CIGS is relatively independent of the Mo deposition conditions. 95,96 Since soda-lime glass is not a reliable source of Na for the manufacturing of solar cells and modules, alternative methods are used to incorporate sodium in CIGS grown on soda-lime glass covered with barrier layers (Al 2 O 3 , Si 3 N 4 , etc.).…”

Section: Sodium Incorporation In Cigsmentioning

confidence: 99%

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

354

192

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Cu(In,Ga)Se2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p‐type absorber layers of optimum optoelectronic properties and n‐type wide‐bandgap partner layers to form the p–n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd.

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Section: Sodium Incorporation In Cigsmentioning

confidence: 99%

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

354

192

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“…Several authors studied GBs in solar-grade CIGS films with respect to their electrical properties 5,6 , character and misorientation [7][8][9] as well as impurity segregation [10][11][12][13] . However, no clear link between these properties could be established so far.…”

Section: Introductionmentioning

confidence: 99%

Atom Probe Tomography Studies on the Cu(In,Ga)Se<sub>2</sub> Grain Boundaries

Cojocaru‐Mirédin

Schwarz

Choi

et al. 2013

JoVE

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Compared with the existent techniques, atom probe tomography is a unique technique able to chemically characterize the internal interfaces at the nanoscale and in three dimensions. Indeed, APT possesses high sensitivity (in the order of ppm) and high spatial resolution (sub nm).Considerable efforts were done here to prepare an APT tip which contains the desired grain boundary with a known structure. Indeed, sitespecific sample preparation using combined focused-ion-beam, electron backscatter diffraction, and transmission electron microscopy is presented in this work. This method allows selected grain boundaries with a known structure and location in Cu(In,Ga)Se 2 thin-films to be studied by atom probe tomography.Finally, we discuss the advantages and drawbacks of using the atom probe tomography technique to study the grain boundaries in Cu(In,Ga)Se 2 thin-film solar cells.

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“…4 In comparison high-efficiency devices on soda-lime glass substrates are typically obtained using growth temperatures of $550 C. Furthermore, it is well known that in a conventional sodalime glass substrate based CIGSe solar cell structure, Na from the soda-lime glass substrate diffuses into the absorber layer due to the elevated temperature during CIGSe formation. [5][6][7][8] Na incorporation into the CIGSe absorber results in a significant improvement of solar cell efficiency, [9][10][11][12] and so for devices based on alternative (i.e., Na-free) substrates, Na must be added deliberately as part of the solar cell manufacturing process. Na can be incorporated prior to, 13,14 during, 12,15 or after 2,16 CIGSe growth.…”

Section: Introductionmentioning

confidence: 99%

Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure

Song

Caballero

Félix

et al. 2012

Journal of Applied Physics

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The following article appeared in Journal of Applied Physics 111.3 (2012): 034903 and may be found at http://scitation.aip.org/content/aip/journal/jap/111/3/10.1063/1.3679604Na has deliberately been incorporated into Cu(In,Ga)Se2 (CIGSe) chalcopyrite thin-film solar cell absorbers deposited on Mo-coated polyimide flexible substrates by adding differently thick layers of NaF in-between CIGSe absorber and Mo back contact. The impact of Na on the chemical and electronic surface structure of CIGSe absorbers with various Cu-contents deposited at comparatively low temperature (420 C) has been studied using x-ray photoelectron and x-ray excited Auger electron spectroscopy. We observe a higher Na surface content for the Cu-richer CIGSe samples and can distinguish between two different chemical Na environments, best described as selenide-like and oxidized Na species, respectively. Furthermore, we find a Cu-poor surface composition of the CIGSe samples independent of Na content and - for very high Na contents - indications for the formation of a (Cu,Na)-(In,Ga)-Se like compound. With increasing Na surface content, also a shift of the photoemission lines to lower binding energies could be identified, which we interpret as a reduction of the downward band bending toward the CIGSe surface explained by the Na-induced elimination of In Cu defects.X.S., R.F., D.G., R.G.W., and M.B. are grateful to the Helmholtz-Association for financial support (VH-NG-423). R.F. also acknowledges the support by the German Academic Exchange Agency (DAAD; 331 4 04 002)

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Na incorporation in Mo and CuInSe2 from production processes

Cited by 41 publications

References 1 publication

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Atom Probe Tomography Studies on the Cu(In,Ga)Se<sub>2</sub> Grain Boundaries

Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure

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Na incorporation in Mo and CuInSe2 from production processes

Cited by 41 publications

References 1 publication

Development of thin‐film Cu(In,Ga)Se2 and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se2 and CdTe solar cells

Atom Probe Tomography Studies on the Cu(In,Ga)Se<sub>2</sub> Grain Boundaries

Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure

Contact Info

Product

Resources

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Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells