Chalcopyrite solar cells achieve efficiencies above 23%. The latest improvements are due to post‐deposition treatments (PDT) with heavy alkalis. This study provides a comprehensive description of the effect of PDT on the chemical and electronic structure of surface and bulk of Cu(In,Ga)Se2. Chemical changes at the surface appear similar, independent of absorber or alkali. However, the effect on the surface electronic structure differs with absorber or type of treatment, although the improvement of the solar cell efficiency is the same. Thus, changes at the surface cannot be the only effect of the PDT treatment. The main effect of PDT with heavy alkalis concerns bulk recombination. The reduction in bulk recombination goes along with a reduced density of electronic tail states. Improvements in open‐circuit voltage appear together with reduced band bending at grain boundaries. Heavy alkalis accumulate at grain boundaries and are not detected in the grains. This behavior is understood by the energetics of the formation of single‐phase Cu‐alkali compounds. Thus, the efficiency improvement with heavy alkali PDT can be attributed to reduced band bending at grain boundaries, which reduces tail states and nonradiative recombination and is caused by accumulation of heavy alkalis at grain boundaries.

Halide perovskites are a strong candidate for the next generation of photovoltaics. Chemical doping of halide perovskites is an established strategy to prepare the highest efficiency and most stable perovskite-based solar cells. In this study, we unveil the doping mechanism of halide perovskites using a series of alkaline earth metals. We find that low doping levels enable the incorporation of the dopant within the perovskite lattice, whereas high doping concentrations induce surface segregation. The threshold from low to high doping regime correlates to the size of the doping element. We show that the low doping regime results in a more n-type material, while the high doping regime induces a less n-type doping character. Our work provides a comprehensive picture of the unique doping mechanism of halide perovskites, which differs from classical semiconductors. We proved the effectiveness of the low doping regime for the first time, demonstrating highly efficient methylammonium lead iodide based solar cells in both n-i-p and p-i-n architectures.

Tin is the frontrunner for substituting toxic lead in perovskite solar cells. However, tin suffers the detrimental oxidation of SnII to SnIV. Most of reported strategies employ SnF2 in the perovskite precursor solution to prevent SnIV formation. Nevertheless, the working mechanism of this additive remains debated. To further elucidate it, we investigate the fluoride chemistry in tin halide perovskites by complementary analytical tools. NMR analysis of the precursor solution discloses a strong preferential affinity of fluoride anions for SnIV over SnII, selectively complexing it as SnF4. Hard X‐ray photoelectron spectroscopy on films shows the lower tendency of SnF4 than SnI4 to get included in the perovskite structure, hence preventing the inclusion of SnIV in the film. Finally, small‐angle X‐ray scattering reveals the strong influence of fluoride on the colloidal chemistry of precursor dispersions, directly affecting perovskite crystallization.

The depletion of oxidized metal sulfide surfaces in metals due to the preferential release of cations is a common, but as yet poorly understood phenomenon. Herein, X-ray photoelectron spectroscopy using excitation energies from 1.25 keV to 6 keV, and Fe K- and S K-edge X-ray absorption near-edge spectra in total electron and partial fluorescence yield modes was employed to study natural chalcopyrite oxidized in air and etched in an acidic ferric sulfate solution. The metal-depleted undersurface formed was found to consist of a thin, 1-4 nm, outer layer containing polysulfide species, a layer with a pronounced deficiency of metals, mainly iron, and an abundant disulfide content but negligible polysulfide content (about 20 nm thick after the chemical etching), and a defective underlayer which extended down to about a hundred nm. DFT+U was used to simulate chalcopyrite with increasing numbers of removed Fe atoms. It was found that the structure with disulfide anion near double Fe vacancies, and the 'defective' structure comprising Cu in the position of Fe and Cu vacancy are most energetically favorable, especially when using a higher Hubbard-type parameter U, and have a large density of states at the Fermi level, whereas polysulfide anions are stable only near the surface. We propose a mechanism explaining the formation of the layered undersurface and 'passivation' of metal sulfides by (i) arrested decomposition of a nearly stoichiometric sulfide surface, and (ii) faster interfacial transfer and solid diffusion of cations towards the surface; (iii) stability limits for specific defect structures, promoting their expansion in depth rather than through compositional changes, excluding surface layers; (iv) decay of surface polysulfide layer yielding elemental sulfur.

We report on the chemical and electronic structure of cesium tin bromide (CsSnBr3) and how it is impacted by the addition of 20 mol % tin fluoride (SnF2) to the precursor solution, using both surface-sensitive lab-based soft X-ray photoelectron spectroscopy (XPS) and near-surface bulk-sensitive synchrotron-based hard XPS (HAXPES). To determine the reproducibility and reliability of conclusions, several (nominally identically prepared) sample sets were investigated. The effects of deposition reproducibility, handling, and transport are found to cause significant changes in the measured properties of the films. Variations in the HAXPES-derived compositions between individual sample sets were observed, but in general, they confirm that the addition of 20 mol % SnF2 improves coverage of the titanium dioxide substrate by CsSnBr3 and decreases the oxidation of SnII to SnIV while also suppressing formation of secondary Br and Cs species. Furthermore, the (surface) composition is found to be Cs-deficient and Sn-rich compared to the nominal stoichiometry. The valence band (VB) shows a SnF2-induced redistribution of Sn 5s-derived density of states, reflecting the changing SnII/SnIV ratio. Notwithstanding some variability in the data, we conclude that SnF2 addition decreases the energy difference between the VB maximum of CsSnBr3 and the Fermi level, which we explain by defect chemistry considerations.