N-type PTCDI–C13H27 thin-film transistors deposited at different substrate temperature

Temperature dependence of the electrical properties of organic thin-film transistors based on tetraphenyldibenzoperiflanthene deposited at different substrate temperatures: Experiment and modeling

“…Alongside of the pentacene, other small-molecules (n or p-type) such as fullerene (C 60 ) [13], copper phthalocyanine (CuPc) [14][15] and N, N-ditridecylperylenediimide (PTCDI-C 13 H 27 ) [16] are reported as a good candidates for the semiconductor layer in OTFTs devices. On the other hand, a numerous collection of donor organic materials have been developed and studied in the previous decade.…”

“…More recently, organic thin-film transistor based DBP (DBP-OTFTs) was fabricated in order to characterize the DBP the DBP thin-films [17]. In order to improve the performance of the OTFTs, several studies have focused on the effects induced by intrinsic factors such as humidity, illumination and temperature [16][17][18][19][20][21][22][23][24], as well as the nature of the dielectric layer and source-drain electrodes [25][26]. In order to understand the transport phenomena in the OTFTs, the behavior of the carrier mobility as function various gate voltages/carrier density and temperature has been widely studied [27][28][29][30].…”

Unified drain-current model of complementary p- and n-type OTFTs

“…In particular, the structural and energetic disorder of the organic semiconductor (OSC) is reflected in the width and shape of its spectral density of states (DOS) [18,19,20]. Although the DOS is material and process dependent [21,22,23], several works have shown that in OTFTs the DOS can be approximated by an exponential [24,25,26] or a double exponential function [22,27,28,29]. In particular, the former has been mainly observed in p-type OTFTs while the latter has been observed in both p-type and n-type OTFTs.…”

Degradation study and calculation of density-of-states in PTCDI-C8 channel layer from the electrical characteristics of thin-film transistors

“…Hence, the electrical performance and nature of degradation of OTFTs have mainly related to the density of localised states (DOS). Puigdollers et al 23 reported DOS measurements in the case of PTCDI-C 13 H 27 active layers used in n-channel OTFTs. In the present work, the electrical characteristics and degradation study of n-type OTFTs using N,N 0 -Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) as channel layer is reported.…”