N-type induced junction black silicon photodiode for UV detection

Juntunen, Mikko A.; Heinonen, Juha; Laine, Hannu S.; Vähänissi, Ville; Repo, Päivikki; Vaskuri, Anna; Savin, Hele

doi:10.1117/12.2265868

Cited by 9 publications

(7 citation statements)

References 13 publications

(11 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Black silicon has excellent absorption and low reflectance in the NIR band. Since the late 1990s, when Eric Mazur, a professor at Harvard University, discovered black silicon by accident [ 9 ], researchers have been exploring its application to infrared photodetection [ 47 , 63 , 82 , 83 , 84 , 85 , 86 , 87 , 88 , 89 ] and ultrahigh sensitivity in the ultraviolet band and visible light range [ 90 , 91 , 92 ].…”

Section: Applicationsmentioning

confidence: 99%

Recent Progress of Black Silicon: From Fabrications to Applications

et al. 2020

View full text Add to dashboard Cite

Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a photodetector, photovoltaic cell, photo-electrocatalysis, antibacterial surfaces, and sensors. With the development of fabrication technology, black silicon has expanded in more and more applications and has become a research hotspot. Herein, this review systematically summarizes the fabricating method of black silicon, including nanosecond or femtosecond laser irradiation, metal-assisted chemical etching (MACE), reactive ion etching (RIE), wet chemical etching, electrochemical method, and plasma immersion ion implantation (PIII) methods. In addition, this review focuses on the progress in multiple black silicon applications in the past 10 years. Finally, the prospect of black silicon fabricating and various applications are outlined.

show abstract

Section: Applicationsmentioning

confidence: 99%

Recent Progress of Black Silicon: From Fabrications to Applications

et al. 2020

View full text Add to dashboard Cite

show abstract

“…This phenomenon results in an effective EQE of over 100 % at wavelengths below 300 nm. For further discussion on this phenomenon, please see 9 .…”

Section: Diode Performancementioning

confidence: 99%

Black silicon n-type photodiodes with high response over wide spectral range

Heinonen

Juntunen

Laine

et al. 2017

Optical Sensors 2017

Self Cite

View full text Add to dashboard Cite

Commercial photodiodes suffer from reflection losses and different recombination losses that reduce the collection efficiency of photogenerated charge carriers. Recently, we realized a near-ideal silicon photodiode, which steps closer to the physical performance limits of silicon photodiodes than any other silicon photodiode realized before. Our device exhibits an external quantum efficiency above 95% over the wavelength range of 235-980 nm, and provides a very high response at incident angles of up to 70 degrees. The high quantum efficiency is reached by 1) virtually eliminating front surface reflectance by forming a "black silicon" nanostructured surface having dimensions in the range of wavelength of optical light and 2) using an induced junction for signal collection, formed by negatively charged alumina, instead of a conventional doped p-n junction. Here, we describe the latest efforts in further development of the photodiode technology. In particular, we report improvements both in the short wavelength response via better control of the surface quality, and superior response to photons with energies close to the silicon bandgap.

show abstract

“…In other photodiode fabrication technologies, oxides, such as MoO x and Al 2 O 3 , are used to introduce a negative fixed charge and create an inversion layer at the silicon/insulator interface [19]- [22]. Due to the insulating properties of oxides, the silicon/insulator interface is usually contacted via a doped Si region [20]. This is in contrast to the noninsulating B-layers that are contacted directly by metal deposition.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents

Knežević

Suligoj

Capan

et al. 2021

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Pure boron (PureB) deposition as the anode region of Si photodiodes creates negative fixed charge at the boron/silicon interface, which is responsible for effective suppression of electron injection from the bulk, thus ensuring low saturation/dark current densities. This mechanism is shown here to remain effective when PureB diodes, fabricated at 700 • C, are operated at cryogenic temperatures down to 100 K. Although the PureB junctions were only a few nanometers deep, they displayed the same current-voltage (I-V) characteristics as conventional deep diffused p + −n junction diodes in the whole temperature range and also maintained ideality factors close to n = 1. Al-contacting was found to reveal process-related defects in the form of anomalous high current regions giving kinks in the I-V characteristics, often only visible at low temperatures. They were identified as minute Al-Si Schottky junctions with an effective barrier height of ∼0.65 ± 0.05 eV. In PureB single-photon avalanche diodes (SPADs), Al-Si perimeter defects appeared but did not affect the breakdown voltage characteristics set by implicit guard rings. Low series resistance required thin B-layers that promoted tunneling. In particular, for such thin layers, avoiding Al-related degradation puts stringent requirements on wafer cleaning and window etch procedures.

show abstract

N-type induced junction black silicon photodiode for UV detection

Cited by 9 publications

References 13 publications

Recent Progress of Black Silicon: From Fabrications to Applications

Recent Progress of Black Silicon: From Fabrications to Applications

Black silicon n-type photodiodes with high response over wide spectral range

Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents

Contact Info

Product

Resources

About