n‐type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation

Abstract

Until now, phosphorus is the best substitutional dopant for n‐type diamond. Its incorporation is usually achieved using phosphine gas. However, organic precursors of phosphorus have been recently investigated. Among them, tertiarybutylphosphine (TBP) appears as an alternative to phosphine. In this report, we investigate the n‐type doping of diamond with liquid TBP using the metal‐organic chemical vapour deposition (MOCVD) technology for dopant incorporation. Our first results with liquid TBP precursor are compared with the results published for gaseous organic precursors of phosphorus. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Recent advances in superconductivity of covalent superconductors

“…In any case, the potential benefits overweigh the difficulties, as ion implantation allows accurate control over the dopant type and its density -other doping techniques of diamond are not capable yet of introducing an impurity other than boron at required levels of the order of atomic per cents. Despite massive research, the highest densities of dispersed phosphorus or nitrogen in diamond are still under 0.1% [28].…”

Phosphorus donor incorporation in (1 0 0) homoepitaxial diamond: Role of the lateral growth

“…Actually, liquid precursors have many advantages compared to gaseous precursors: wider choice of organic compounds, safer handling, larger dilution range (from some ppb to several per cent) and lower toxicity. In our laboratory, we have built a diamond growth system having this combination of MPCVD and MOCVD technologies [21].…”

“…Around the world, only a few laboratories have shown n-type doping with P on (1 1 1) orientation with compensation ratios (ratio N a /N d between the acceptor concentration and the donor concentration) lower than 10%. In our laboratory, we have reached the state of the art of the RT electron mobilities (350 cm 2 /V s for 6 Â 10 17 P/cm 3 [18]) by combining two technologies on our prototype reactor: the MPCVD, for the diamond growth, and the metalorganic CVD (MOCVD) for the diamond doping with organic compounds [21]. In the case of the (1 0 0) orientation, only three groups have succeeded, up to now, to obtain phosphorus donors in diamond [20,22,23].…”

Superconductivity in covalent semiconductors

“…High doping densities of above 1 at.% are required, which have not been achieved yet. Despite massive research, the highest densities of phosphorus in diamond are still under 0.01% [54].…”