Phosphorus donor incorporation in (1 0 0) homoepitaxial diamond: Role of the lateral growth

Pinault-Thaury, Marie-Amandine; Tillocher, Thomas; Kobor, Diouma; Habka, Nada; Jomard, François; Chevallier, J.; Barjon, Julien

doi:10.1016/j.jcrysgro.2011.06.007

Cited by 19 publications

(19 citation statements)

References 32 publications

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“…Before introduction in the growth reactor, the substrate was chemically cleaned [19] to remove any organic and metallic contaminations from its surface.…”

Section: Methodsmentioning

confidence: 99%

Electrical activity of (100) n‐type diamond with full donor site incorporation of phosphorus

Pinault-Thaury

Stenger

Jomard

et al. 2015

Physica Status Solidi (a)

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International audienceIn a previous work, we discovered a new set of growth parameters for fabricating (100) homoepitaxial phosphorus-doped n-type diamond with unique properties: full incorporation of phosphorus donors in substitutional sites together with a low surface roughness. In this work, a planar type Schottky barrier diode has been fabricated on the epilayer and C–V characteristics were measured. From the capacitance properties, the net donor density and the Schottky barrier height were experimentally determined to be ∼3.1 × 1016 cm−3 and ∼4.65 eV, respectively. The phosphorus electrical activity in our (100) n-type diamond epilayer is discussed in comparison with previous works on the (100) and (111) orientations

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“…Before introduction in the growth reactor, the substrate was chemically cleaned [19] to remove any organic and metallic contaminations from its surface.…”

Section: Methodsmentioning

confidence: 99%

Electrical activity of (100) n‐type diamond with full donor site incorporation of phosphorus

Pinault-Thaury

Stenger

Jomard

et al. 2015

Physica Status Solidi (a)

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“…1D plasma modelling as well as spectroscopy measurements are currently being performed at LSPM in order to measure species density and distribution in the plasma. Another important parameter to take into account is a change in the diamond surface morphology, such as for example the presence of macrosteps under specific growth conditions that is known to strongly influence the uptake of impurities 19, 20.…”

Section: High Doping Level Control For Thick Films Synthesismentioning

confidence: 99%

Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices?

Achard

Issaoui

Tallaire

et al. 2012

Physica Status Solidi (a)

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The development of ‘all‐diamond’ devices for power electronics is attracting more and more interest as judged by the recent increase in the number of publications on the subject. Nevertheless most devices reported in the literature used coplanar or pseudo‐vertical geometries which, although promising in term of breakdown voltage, have still a relatively high on‐state resistance. This could be related to current crowding due the low cross‐section p+ layer. Vertical configuration, which requires thick heavily doped substrates, is a possible alternative usually used in conventional semiconductors. In this study, chemical vapour deposition (CVD) diamond growth conditions allowing heavy boron doping over an important thickness are discussed. It was found that there is an optimal range of microwave power density (MWPD) for which reasonable doping efficiencies and growth rates can be obtained leading to hundreds of micrometers thick crystals with a doping level higher than 1020 cm−3. The crystal morphology was predicted thanks to a 3D geometrical model and a small addition of oxygen to the gas phase was efficient to avoid the appearance of undesirable crystals faces and keep the crystal integrity. Freestanding boron‐doped diamond single crystals were eventually grown and characterized by secondary ion mass spectrometry (SIMS), Fourier transformed InfraRed (FTIR) spectroscopy, Raman spectroscopy, high resolution X‐ray diffraction (HRXRD) and four‐point probe measurements. The high quality of the synthetic crystals was confirmed exhibiting electrical resistivities as low as 0.26 Ω cm illustrating that this material is suitable for the development of vertical power electronic devices.

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“…The efficient n-type (100) diamond films with P doping are still a challenge due to the intrinsic difficulties of low incorporation efficiency, high compensation ratio, and small donor fraction of P on this facet with respect to that for (111) epilayers [13,42,[52][53][54]. Since CVD diamond gives the minimum defect density in (100) growth sectors rather than that in (111) sectors, it is desired to fabricate (100) P-doped diamond epilayers for future applications.…”

Section: Doping Of Cvd Scdsmentioning

confidence: 99%

Epitaxy of Carbon-Based Materials

2015

Handbook of Crystal Growth

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Phosphorus donor incorporation in (1 0 0) homoepitaxial diamond: Role of the lateral growth

Cited by 19 publications

References 32 publications

Electrical activity of (100) n‐type diamond with full donor site incorporation of phosphorus

Electrical activity of (100) n‐type diamond with full donor site incorporation of phosphorus

Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices?

Epitaxy of Carbon-Based Materials

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