Electrical activity of (100) n‐type diamond with full donor site incorporation of phosphorus

Pinault-Thaury, Marie-Amandine; Stenger, Ingrid; Jomard, François; Chevallier, J.; Barjon, Julien; Traoré, Aboulaye; Eon, David; Pernot, Julien

doi:10.1002/pssa.201532206

Cited by 18 publications

(15 citation statements)

References 34 publications

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“…The growth was performed in a home‐made MPCVD reactor described elsewhere, used for the growth on the (100) orientation with tertiarybutyl‐phosphine (TBP) as a dopant source. The incorporation ratio of phosphorus being much lower on (100) than on (111) surfaces, the phosphorus doping on (100) requires high amounts of TBP which induces a high residual content of phosphorus in layers grown on the (111)‐orientation. This contamination problem is the reason why the phosphorus doping of diamond usually requires two growth reactors: one dedicated to low TBP pressure, suited to the (111) orientation, and another one dedicated to high TBP pressures, suited to the (100) orientation.…”

Section: Methodsmentioning

confidence: 99%

New Process for Electrical Contacts on (100) N‐type Diamond

Temahuki

Gillet

Sallet

et al. 2017

Physica Status Solidi (a)

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Obtaining ohmic contacts on n-type diamond is a very compelling concern in the framework of designing power electronic devices. The present contribution considers a new technological process combining microstructuring and highly phosphorus-doped overgrowth to investigate quasi-ohmic contacts on (100) phosphorus doped diamond. For now, the two processes were tested on (100) and (111) diamond single crystal substrates. The results are exposed and discussed.

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Section: Methodsmentioning

confidence: 99%

New Process for Electrical Contacts on (100) N‐type Diamond

Temahuki

Gillet

Sallet

et al. 2017

Physica Status Solidi (a)

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“…The rate of incorporation in donor sites

N_{normalD} / true[P true]

has been a determinant experimental parameter to identify the narrow windows of epitaxy conditions (surface desorientation,

true[C true] / true[H_{2} true]

, temperature, etc.) giving

N_{normalD} / true[P true] \approx 100 %

on (100) surfaces . Figure illustrates the continous progress achieved since the beginning of the phosphorus doping on (100)‐oriented diamond at GEMaC.…”

Section: Recombination Processesmentioning

confidence: 99%

Luminescence Spectroscopy of Bound Excitons in Diamond

Barjon

2017

Physica Status Solidi (a)

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Since the research on diamond doping remains an issue for electronic applications, the luminescence spectroscopy of bound excitons appears essential to evaluate the properties of shallow dopants in diamond. In this paper, the formation and recombination processes of bound excitons in diamond are reviewed for boron acceptors, phosphorus, and arsenic donors. Pulsed and continuous excitations are considered, the latter being currently used for the measurement of donor and acceptor concentrations in diamond.

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“…The low-index (100) plane is one of the most frequently obtained surface planes in CVD-grown diamond. In addition, the (100) epitaxial layers are generally believed to have a better electronic quality than their surface (111) equivalent [26]. The purpose with the present study has therefore been to theoretically investigate the combined effect by P-doping and surface termination on the energetics, and especially the electronic structure, of the diamond (100) surface.…”

Section: Introductionmentioning

confidence: 99%

A Theoretical Study of the Energetic Stability and Electronic Structure of Terminated and P-Doped Diamond (100)-2x1 Surfaces

2019

ANN

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The combined effect of P-doping and surface-termination on the energetics, and especially the electronic structure, of a diamond (100) surface, has in the present study been investigated by using a Density Functional Theory method. The diamond surface was terminated with any of the following species: H, F, OH, Obridge and NH2 . These adsorbates have earlier experimentally been proven crucial for e.g. applications based on surface electrochemistry. The observed results were analysed with the purpose to obtain a deeper knowledge about the atomic-level cause to the observed effects by the P doping and surface termination. The P dopant was found to have a very minor influence on the averaged adsorption energy for the various terminating species (i.e. with less than 0.17 eV). Moreover, the adsorbates were found to reduce the stability of the P-dopant in the diamond lattice. When analysing the results of the calculated partial density of states, the P dopant was found to contribute with band gap states below the conduction band, out of which one is a donor band. In addition, the surfaces with their terminating species will contribute with empty band gap states just below the CBM of the diamond surfaces. Hence, the combination of P doping and surface termination will induce both donor and acceptor states in the diamond surface band gap, which will improve the usefulness of these specific diamond surfaces in various electronic devices. The work function of a diamond surface is one specific properties that will be affected by substitutional doping and surface termination. Within the present study, the terminating species were found to render a strong impact on the surface work function (as compared to a non-terminated diamond (100)-2x1 surface), with calculated work function values that were even further decreased by P-doping.

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Electrical activity of (100) n‐type diamond with full donor site incorporation of phosphorus

Cited by 18 publications

References 34 publications

New Process for Electrical Contacts on (100) N‐type Diamond

New Process for Electrical Contacts on (100) N‐type Diamond

Luminescence Spectroscopy of Bound Excitons in Diamond

A Theoretical Study of the Energetic Stability and Electronic Structure of Terminated and P-Doped Diamond (100)-2x1 Surfaces

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