Superconductivity in covalent semiconductors

Iakoubovskii, Konstantin

doi:10.2478/s11534-009-0096-7

Cited by 13 publications

(14 citation statements)

References 88 publications

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“…In crystalline phases, doping of group IV elements with boron as the source of holedoping has been shown to induce superconductivity [12,13,17]. For sufficient boron doping (~100 ppm), silicon becomes metallic [18] and superconducting at a boron concentration of several percent with a critical temperature of Tc0.35 K [13].…”

Section: Introductionmentioning

confidence: 99%

Characterization of neutral boron-silicon clusters using infrared spectroscopy: The case of Si6B

Trường

Haertelt

Jaeger

et al. 2016

International Journal of Mass Spectrometry

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Nano-size clusters are of great interest for understanding of fundamental properties and processes relevant for applied materials science such as heterogeneous catalysis. In this study, we present a newly developed dualtarget dual-laser ablation source, suitable for the production of binary clusters and their spectroscopic characterization. With the current design, an almost arbitrary mixing ratio can be achieved by altering different parameters such as the laser fluences. Boron and silicon targets are chosen for cluster production, illustrating the possibility to control the outcome ranging from pure boron over mixed SinBm to pure silicon clusters. As a test system, Si6B clusters are characterized by means of infrared-ultraviolet two-color ionization (IR-UV2CI) spectroscopy, combined with quantum chemical simulations. The most stable structure of Si6B (Cs, 2 A') predicted in our previous work is confirmed by the present experiment. Doping of Si7 with a single B atom has a drastic impact on the geometric, vibrational, and electronic properties.

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Section: Introductionmentioning

confidence: 99%

Characterization of neutral boron-silicon clusters using infrared spectroscopy: The case of Si6B

Trường

Haertelt

Jaeger

et al. 2016

International Journal of Mass Spectrometry

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“…Notably, not more than one decade has passed since the sudden scientific ascent of superconductivity in covalentbound materials [1,2]. Highly doped diamond [3], silicon [4], and germanium [5] -classic group-IV semiconductors -surprisingly turned out to be low-temperature superconductors.…”

Section: Introductionmentioning

confidence: 99%

The impact of heavy Ga doping on superconductivity in germanium

Skrotzki

Herrmannsdörfer

Heera

et al. 2011

Low Temperature Physics

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We report new experimental results on how superconductivity in gallium-doped germanium (Ge:Ga) is influenced by hole concentration and microstructure. Ion implantation and subsequent flash-lamp annealing at various temperatures have been utilized to prepare highly p-doped thin films consisting of nanocrystalline and epitaxially grown sublayers with Ga-peak concentrations of up to 8 at.%. Successive structural investigations were carried out by means of Rutherford-backscattering spectrometry in combination with ion channelling, secondaryion-mass spectrometry, and high-resolution cross-sectional transmission electron microscopy. Hole densities of 1.8·10 20 to 5.3·10 20 cm -3 (0.4 to 1.2 at.%) were estimated via Hall-effect measurements revealing that only a fraction of the incorporated gallium has been activated electrically to generate free charge carriers. The coincidence of a sufficiently high hole and Ga concentration is required for the formation of a superconducting condensate. Our data reflect a critical hole concentration of around 0.4 at.%. Higher concentrations lead to an increase of T c from 0.24 to 0.43 K as characterized by electrical-transport measurements. A short mean-free path indicates superconductivity in the dirty limit. In addition, small critical-current densities of max. 20 kA/m 2 point to a large impact of the microstructure.PACS: 74.10.+v Occurrence, potential candidates; 74.78.-w Superconducting films and low-dimensional structures.

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“…Alignment of CNTs to a required direction is important not only for electric, optoelectronic, and electrochemical devices application, but also for increasing mechanical strength in CNT-reinforced sheets. Several processes, such as rubbing, electric field, and magnetic field have been used to uniaxially align CNTs [9]. Kim et al have aligned chemically treated SWCNTs using the LB technique [10].…”

Section: In Plane Orientation Of Swcnt Ultrathin Film Fabricated Usinmentioning

confidence: 99%

In Plane Orientation of SWCNT Ultrathin Film Fabricated Using a Liquid–Liquid Interface

Kudo

Matsui

Shibata

et al. 2010

Molecular Crystals and Liquid Crystals

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Non-chemically treated single-walled carbon nanotubes (SWCNTs) were assembled at a liquid-liquid interface in the shape of an ultrathin film. SWCNTs were dispersed into water phase by aid of sodium dodecyl sulfate (SDS) and were assembled at a hexane-water interface with addition of ethanol. The assembled film was transferred onto a solid substrate at various dipping speeds. Polarized absorption spectra of the transferred film indicated that the SWCNTs aligned with their long axis parallel to the dipping direction when the assembly was transferred at the dipping speed of 50 mm=min.

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Superconductivity in covalent semiconductors

Cited by 13 publications

References 88 publications

Characterization of neutral boron-silicon clusters using infrared spectroscopy: The case of Si6B

Characterization of neutral boron-silicon clusters using infrared spectroscopy: The case of Si6B

The impact of heavy Ga doping on superconductivity in germanium

In Plane Orientation of SWCNT Ultrathin Film Fabricated Using a Liquid–Liquid Interface

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