Mutual interference in calibration line configurations

Schmuckle, F.J.; Probst, T.; Arz, Uwe; Phung, Gia Ngoc; Doerner, Ralf; Heinrich, W.

doi:10.1109/arftg.2017.8000823

Cited by 17 publications

(10 citation statements)

References 3 publications

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“…A two-port open-open pair was also fabricated on the same substrate. The spacing between circuits was kept to a minimum of 3λg, which is greater than that suggested in [24]. The substrate was then thinned down to 100 ¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯ ( )( The open-open pair standard and the attenuator were fabricated on the same 4-inch semi-insulating gallium arsenide substrate using a standard photolithography method.…”

Section: Resultsmentioning

confidence: 99%

Calibration on the Fly—A Novel Two-Port S-Parameter Measurement Method for On-Wafer Leaky Systems

Liu

Liang

et al. 2020

IEEE Trans. Microwave Theory Techn.

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In this paper, we present a two-port on-wafer scattering parameter measurement method to tackle the issue of crosstalk between probes. The proposed method treats the crosstalk separately during the system calibration and the device measurement stages, because the crosstalk during these stages is often different due to changes in the measurement conditions after the probes have been calibrated. For example, devices under test (DUTs) and calibration standards are often situated on different substrates, or, the distance between probes during calibration is different from that during DUT measurement. Based on this concept, we develop a new error model in which the crosstalk is treated as a standalone two-port error network in parallel with the two-port calibration standards or DUTs. The two-port crosstalk error generated during probing, ECT, is removed in the system calibration and corrected during the measurement of the DUT by using a dummy pair of open-circuit standards that are fabricated on the same substrate as the DUT. Since the crosstalk is corrected while measuring the DUT, rather than during system calibration, we call this method "calibration on the fly" (COF). The method is demonstrated using measurements of a 10-dB attenuator between 140 GHz and 220 GHz.

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Section: Resultsmentioning

confidence: 99%

Calibration on the Fly—A Novel Two-Port S-Parameter Measurement Method for On-Wafer Leaky Systems

Liu

Liang

et al. 2020

IEEE Trans. Microwave Theory Techn.

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“…Williams et 2013 mention: "These three standards were placed 150 µm apart to reduce the direct coupling between the calibration standards, and allow the crosstalk between the probes and the access lines to be characterized and at least partially removed from the measurements, as explained in [7]". Also Schmückle et al [21] have evidently underlined the influence of the neighboring structure on the measurement accuracy. To prove this, identical thrus were positioned on a GaAs substrate with different neighbors and different distances.…”

Section: Floorplanmentioning

confidence: 99%

“…Fig. 7 from [21] illustrates the electric field distribution of two similar structures at two different positions on the wafer. Two conclusions can be drawn from this: i) "the fields are not at all confined to the intended structure but show significant spatial extension involving the neighboring line elements"; ii) "the intensity of the stray fields increases with frequency and that more and more elements are involved in the resulting behavior".…”

Section: Floorplanmentioning

confidence: 99%

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Fregonèse

Deng

Cabbia

et al. 2020

IEEE J. Electron Devices Soc.

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This paper presents a state-of-art review of on-wafer S-parameter characterization of THz silicon transistors for compact modelling purpose. After, a brief review of calibration/de-embedding techniques, the paper focuses on the onwafer calibration techniques and especially on the design and dimensions of lines built on advanced silicon technologies. Other information such as the pad geometry, the ground plane and the floorplan of the devices under test are also compared. The influence of RF probe geometry on the coupling with the substrate and adjacent structures is also considered to evaluate the accuracy of the measurement, especially using EM simulation methodology. Finally, the importance of measuring above 110 GHz is demonstrated for SiGe HBT parameter extraction. The validation of the compact model is confirmed thanks to an EM-spice cosimulation that integrates the whole calibration cum deembedding procedure.

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“…8 mm). For the excitation, a detailed probe model, which was already implemented in [3]- [5], is used.…”

Section: Layout and Technologymentioning

confidence: 99%

“…The influence of the neighborhood on coplanar waveguides (CPWs) used as standards for multiline thrureflect-line (TRL) calibrations [2] was demonstrated for CPWs on GaAs and Al 2 O 3 (alumina) substrates in [3] and [4], respectively. The latter investigation included different probe geometries and suggested measures to suppress the occurrence of substrate modes.…”

Section: Introductionmentioning

confidence: 99%

Traceable Coplanar Waveguide Calibrations on Fused Silica Substrates up to 110 GHz

Arz

Kuhlmann

Dziomba

et al. 2019

IEEE Trans. Microwave Theory Techn.

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In this paper, we present a comprehensive uncertainty budget for on-wafer S-parameter measurements of devices on a custom-built fused silica wafer, including instrumentation errors, connector repeatability, and calibration standard uncertainties. All major steps toward achieving traceability with the aid of a multiline thru-reflect-line calibration for the given measurement scenario are explained. For the first time, it is now possible to compare against each other the relative importance of different sources of uncertainty in on-wafer measurements. Results are shown for three typical devices with varying reflection and transmission characteristics.

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Mutual interference in calibration line configurations

Cited by 17 publications

References 3 publications

Calibration on the Fly—A Novel Two-Port S-Parameter Measurement Method for On-Wafer Leaky Systems

Calibration on the Fly—A Novel Two-Port S-Parameter Measurement Method for On-Wafer Leaky Systems

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Traceable Coplanar Waveguide Calibrations on Fused Silica Substrates up to 110 GHz

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