Multiple-species implantation for defect engineering of shallow p±junctions in Si(100)

Current, Michael; Hara, Tohru; Fujii, Satoshi; Inoue, M.; Ohno, N.

doi:10.1016/b978-0-444-81994-9.50085-3

Cited by 2 publications

(1 citation statement)

References 4 publications

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“…[12][13][14] The combination of anodic etching of thin silicon layers with a surface characterization method such as PAD is an effective tool to measure residual damage accumulation profiles formed into silicon substrate layers which are implanted. 15 Principle of the PAD technique.-The PAD exploits the minute vertical displacement of the silicon surface due to local heating of lower thermal conductivity by the formation of damage by a pulsed laser beam. 14,16 When a laser beam irradiates the damage layer in the silicon substrate surface induced by ion implantation, this dam-age layer in the silicon substrate is heated by recombination of electrical carriers created by photon absorption.…”

Section: Damage Depth Profiles By the Pad Techniquementioning

confidence: 99%

Boron Damage Profiles in Crystalline and Fluorine Preamorphized Silicon Layers

Ohno¹,

Hara

Current

2005

J. Electrochem. Soc.

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Damage accumulation profiles induced by ion implantation into single-crystalline silicon layers and preamorphized silicon layers were investigated by the photoacoustic displacement ͑PAD͒ method. Boron ions were implanted at 10 keV with 1 ϫ 10 15 ions/cm 2 and 3 ϫ 10 15 ions/cm 2 into single-crystalline silicon and preamorphized silicon. Preamorphization was achieved by fluorine ion implantation prior to boron ion implantation. These implanted layers were annealed at 950°C for 30 s by rapid thermal annealing. Damage profiles measured by PAD were compared to measured and calculated dopant and damage profiles. Effects of ion dose, annealing temperature, and combination of fluorine and boron implants were studied. Analysis of secondary ion mass spectroscopy profiles of fluorine combined with boron yielded values of 5.93 eV for F-B binding energy in a segregated region.

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