Abstract:Damage accumulation profiles induced by ion implantation into single-crystalline silicon layers and preamorphized silicon layers were investigated by the photoacoustic displacement ͑PAD͒ method. Boron ions were implanted at 10 keV with 1 ϫ 10 15 ions/cm 2 and 3 ϫ 10 15 ions/cm 2 into single-crystalline silicon and preamorphized silicon. Preamorphization was achieved by fluorine ion implantation prior to boron ion implantation. These implanted layers were annealed at 950°C for 30 s by rapid thermal annealing. D… Show more
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