1985
DOI: 10.1088/0305-4608/15/4/006
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Multiple defects in copper and silver

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1985
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Cited by 45 publications
(16 citation statements)
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“…It is quite evident from various studies that clustering of vacancies significantly decreases migration barriers. Previous work by Lam et al [22] on FCC Cu showed that the defect migration barrier decreased from 0.82 eV to 0.55 eV from mono to di-vacancy. Similarly, Sabochick and Yip [23] showed that the barriers further decrease to 0.56 eV and 0.38 eV in tri and tetravacancy clusters.…”
mentioning
confidence: 85%
“…It is quite evident from various studies that clustering of vacancies significantly decreases migration barriers. Previous work by Lam et al [22] on FCC Cu showed that the defect migration barrier decreased from 0.82 eV to 0.55 eV from mono to di-vacancy. Similarly, Sabochick and Yip [23] showed that the barriers further decrease to 0.56 eV and 0.38 eV in tri and tetravacancy clusters.…”
mentioning
confidence: 85%
“…In the present analysis, we shall apply the method of moments [39,40] to solve NSWE, that is, Equation (12). The method of moments was developed by Vlasov et al [41] for the cubic Schrödinger equation (CSE) in 2D cylindrical symmetry and was applied for the self-focusing phenomenon.…”
Section: Self-focusing and Self-compression Of The Laser Pulsementioning
confidence: 99%
“…Without ® tting to any experimental data this potential reproduced very well bulk properties, such as phonon dispersion curves and structural factor of the liquid, whereas applied to a vacancy it gave an unphysically low value of the formation energy. It should be mentioned that in the case of interstitial-type defects, for which these e ects are not expected to be so strong, the same potential was used to simulate self-interstitial defects in pure Al (Lam et al 1983) and interstitial± solute defects in aluminium-based alloys (Lam et al 1981). It should be mentioned that in the case of interstitial-type defects, for which these e ects are not expected to be so strong, the same potential was used to simulate self-interstitial defects in pure Al (Lam et al 1983) and interstitial± solute defects in aluminium-based alloys (Lam et al 1981).…”
Section: §1 Introductionmentioning
confidence: 99%
“…The defect formation energy, E f d , of a vacancy (d = v) and a self-interstitial (d = i) were determined using the standard formula (see, for example, Lam et al (1983))…”
mentioning
confidence: 99%