2016
DOI: 10.1016/j.scriptamat.2015.12.020
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Formation and growth of stacking fault tetrahedra in Ni via vacancy aggregation mechanism

Abstract: Using molecular dynamics simulations, the formation and growth of stacking fault tetrahedra (SFT) are captured by vacancy cluster diffusion and aggregation mechanisms in Ni. The vacancytetrahedron acts as a nucleation point for SFT formation. Simulations show that perfect SFT can grow to the next size perfect SFT via a vacancy aggregation mechanism. The stopping and range of ions in matter (SRIM) calculations and transmission electron microscopy (TEM) observations reveal that SFT can form farther away from the… Show more

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Cited by 49 publications
(23 citation statements)
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“…To cross-check the results, another potential for pure Ni developed by Mishin et al was also used. [22] The simulation cell was oriented along the [112], [ 10] and [ ] directions with the dimensions of around 4.4, 5.1, and 5.0 nm, respectively. All simulations were carried out in the NPT ensemble at zero pressure.…”
Section: Methodsmentioning
confidence: 99%
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“…To cross-check the results, another potential for pure Ni developed by Mishin et al was also used. [22] The simulation cell was oriented along the [112], [ 10] and [ ] directions with the dimensions of around 4.4, 5.1, and 5.0 nm, respectively. All simulations were carried out in the NPT ensemble at zero pressure.…”
Section: Methodsmentioning
confidence: 99%
“…Therefore, these VCs will stay in their original locations for a long time after they are created by, for example, cascade collisions induced by ion irradiation. Hence, the growth of VCs by the incorporation of additional vacancies or small clusters[10] is suppressed in these CSAs, especially in Ni 0.4 Fe 0.4 Cr 0.2 .Diffusion coefficients shown inFig. 3also indicate that small VCs migrate faster than a single vacancy.…”
mentioning
confidence: 93%
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“…Ab initio theory, time-dependent density functional theory (TD-DFT), AIMD, and classical MD simulations have revealed how alloy complexity can alter energy dissipation (the first distinctive property described in Section 3A) in the electronic and atomic subsystems [48][49][50][51], thereby offering the possibility of enhanced defect recombination or self-healing radiation resistance. Increasing experimental activities are evident in recent literatures [2,[12][13][14]23], including the successful growth of large single crystals, the integrated experiments and modeling predictions [2,12,13,[52][53][54][55][56][57], and the collaborative execution of well-defined irradiation experiments and microstructural characterization to evaluate compositional effects on radiation response [12][13][14]17,23,[55][56][57][58][59].…”
Section: B Defect Production and Damage Accumulationmentioning
confidence: 99%
“…3. A different approach has been applied to CSAs in MD simulations to study point defect interactions at very high concentrations [52,54]. Instead of creating Frenkel pairs via time-consuming ballistic recoil events in MD cascade simulations as shown by the peak in Fig.…”
Section: B-3 Primary Damage Formation From Cascade Event Within Thementioning
confidence: 99%