Multiple-barrier distribution behavior of Mo/p-GaTe fabricated with sputtering

Temperature dependence of current-and capacitance–voltage characteristics of an Au/4H-SiC Schottky diode

“…While n increases with the temperature, / e decreases rapidly. These anomaly behaviors of / e and n are due to Schottky barrier inhomogeneities and it is expressed frequently in literature [32][33][34][35][39][40][41]53,54].…”

“…In order to calculate the series resistance values of Schottky diodes, Cheung functions [52] are used frequently in the literature [40,41]. The series resistance values of Au/4H-SiC increase from 16.5 X to 84.3 X with the temperature which goes from 300 K to 100 K. The variation of series resistance values of Au/4H-SiC versus temperature are shown in Fig.…”

“…However, the failures of this approach have been recently confirmed by some investigators [39][40][41], due to the fact that it may not be suitable to characterize more experimental data contains than one Gaussian distribution for most cases and is only used for fitting to a part of distribution rather than all. As a result, the deficiencies in the single-Gaussian approach were removed by a multi-Gaussian consideration with the values of weight, the mean barrier height and the standard deviation for each Gaussian region of the spatial barrier height distribution, introduced by Yu-Long et al [39].…”

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

“…Kumar et al [114] have determined the value of the RC value in the InN nanodot-Si heterojuction by Tung's model byfollowing Roccaforte et al [113]. Recently, for Mo/ p-GaTe SCs,Gülnahar and Efeoğlu [115] have obtained the RC value from the modified Richardson plot by Werner and Guttler's approach [57] using the temperature-dependent standarddeviation values. Soylu and Yakuphanoglu [116] have studied a statistical study on the barrier heights and ideality factors of the room temperature forward bias current-voltage curves of Au/n -GaAs SC.…”