Temperature dependence of current-and capacitance–voltage characteristics of an Au/4H-SiC Schottky diode

Gülnahar, Murat

doi:10.1016/j.spmi.2014.09.035

Cited by 41 publications

(24 citation statements)

References 54 publications

(123 reference statements)

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“…It was also observed earlier for alpha-particle irradiated devices [31]. These deviations are due to the presence of inhomogeneities at the interface (such as surface defects and inhomogeneity in doping concentration) [20,[33][34][35][36][37][45][46][47]. There was little noticeable change in the ideality factors and SBH at temperature 120 K and above, for before and after irradiation.…”

Section: I-v Characteristicssupporting

confidence: 59%

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The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Omotoso

Meyer

Auret

et al. 2015

Materials Science in Semiconductor Processing

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The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H-SiC samples of doping density 7.1 × 10 15 cm -3 has been investigated over the temperature range 40-300 K. Currentvoltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) were used to characterize the devices before and after irradiation at a fluence of 6 × 10 14 electrons-cm -2 . For both devices, the I-V characteristics were well described by thermionic emission (TE) in the temperature range 120 -300 K, but deviated from TE theory at temperature below 120 K. The current flowing through the interface at a bias of 2.0 V from pure thermionic emission to thermionic field emission within the depletion region with the free carrier concentrations of the devices decreased from 7.8 × 10 15 to 6.8 × 10 15 cm -3 after HEE irradiation. The modified Richardson constants were determined from the Gaussian distribution of the barrier height across the contact and found to be 133 and 163 Acm −2 K −2 for as-deposited and irradiated diodes, respectively. Three new defects with energies 0.22, 0.40 and 0.71 eV appeared after HEE irradiation. Richardson constants were significantly less than the theoretical value which was ascribed to a small active device area.

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Section: I-v Characteristicssupporting

confidence: 59%

“…It could be deduced from Table 1 that the SBH I-V decrease and the ideality factor increase, with decreasing in temperature [33][34][35][36][37]. It was also observed that SBHs I-V decrease and the ideality factors increase after HEE…”

Section: I-v Characteristicsmentioning

confidence: 99%

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Omotoso

Meyer

Auret

et al. 2015

Materials Science in Semiconductor Processing

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“…The value 𝑞𝑉 = 3𝑘𝑇 relates to the minimum energy needed to pick up electrons from the top of the valance band. For all applied voltages larger than 3𝑘𝑇 𝑞 electrons can move in the devices by thermionic emission over the energy barriers [12,17]. The current rectification ratio sharply decreases with increasing applied voltage in the range of 0.08 < 𝑉 < 0.19 𝑉.…”

Section: Resultsmentioning

confidence: 99%

“…2 (b)). In general, the barrier height is related to the built in potential through the relation [12,17],…”

Section: Resultsmentioning

confidence: 99%

“…The deviation of the ideality factor 𝑛 ̃ from unity can be ascribed to the generationrecombination mechanisms of charge carriers in the depletion layer, parasitic voltage drop due to high series resistance and the tunneling of charge carriers through the subgap 𝐸 𝑔 ′ (Fig. 2 (a)) [12,17]. In addition, existence of the interfacial layers in the films, barrier inhomogeneous or wide distribution of low-barrier height patches leads to the formation of interface states and thus accounts for the deviation of ideality factor from unity [11].…”

Section: Resultsmentioning

confidence: 99%

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Yb/InSe/Sb2Te3/Au BROKEN GAP HETEROJUNCTION DEVICES DESIGNED AS CURRENT RECTIFIERS, TUNABLE MOS CAPACITORS AND GIGAHERTZ MICROWAVE CAVITIES

Alfhaid¹,

Qasrawi²,

Algarni³

2021

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Herein, we report the design and experimental characterization of a broken gap heterojunction devices fabricated by vacuum evaporation of Yb/InSe/Sb2Te3/Au stacked layers. The structural characterizations of the stacked layers revealed an amorphous/polycrystalline heterojunction type. The measurements of capacitance-voltage characteristics in the frequency domain of 1.0-9.0 MHz displayed tunable metal-oxidesemiconductor (MOS) characteristics. The frequency dependent built-in voltage, depletion width, and free carrier density is also investigated. In addition, the analyses of currentvoltage characteristics have shown that the device displays highly stable current rectification ratios of ~103 above 0.20 V. Moreover, the ac signal analyses in the frequency domain of 10-1800 MHz have shown the possible tunability of the conductance and capacitance over a wide range of frequency. Furthermore, the microwave cutoff frequency spectra indicated increasing cutoff frequency limits with increasing incident signal frequency. The microwave cutoff frequency reached 7.1 GHz for a propagating signal of frequency of 1800 MHz.

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Fundamentals of Thermoelectrical Effect in SiC

Dinh¹,

Nguyen

Dao

2018

Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors

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Temperature dependence of current-and capacitance–voltage characteristics of an Au/4H-SiC Schottky diode

Cited by 41 publications

References 54 publications

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Yb/InSe/Sb2Te3/Au BROKEN GAP HETEROJUNCTION DEVICES DESIGNED AS CURRENT RECTIFIERS, TUNABLE MOS CAPACITORS AND GIGAHERTZ MICROWAVE CAVITIES

Fundamentals of Thermoelectrical Effect in SiC

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