Multilevel resistance switching in Cu/TaOx/Pt structures induced by a coupled mechanism

Yang, Yifei; Chen, C.; Zeng, Fei; Pan, Feng

doi:10.1063/1.3399152

Cited by 45 publications

(28 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The mechanism of the normal unipolar RS in ECM device has been widely studied, which is dominated by formation and rupture of continuous CF based on Joule heating assisted cation redox reaction. [29][30][31][32][33][34] For abnormal unipolar switching, the electroforming process is achieved at low I CC (10 nA) condition. In this case, the device shows threshold switching characteristic during electroforming process (Fig.…”

Section: Resultsmentioning

confidence: 99%

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

Sun

Liu

Long

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices Appl. Phys. Lett. 101, 063501 (2012); 10.1063/1.4744950 Bipolar resistive switching performance of the nonvolatile memory cells based on ( AgI ) 0.2 ( Ag 2 MoO 4 ) 0.8 solid electrolyte filmsIn this paper, we report a multilevel unipolar resistive switching (RS) phenomenon with negative differential resistance (NDR) effect in Ag/SiO 2 /Pt sandwich structure. After positive electroforming process with low compliance current (I CC , 10 nA), a conductive filament consisting of isolated Ag nanocrystals is formed inside SiO 2 layer. Then, an abnormal unipolar resistive switching (RESET voltage is larger than SET voltage) with NDR effect is obtained under negative voltage sweep without I CC . Based on I-V fitting and temperature dependence of the resistance results, we suggest that the abnormal unipolar RS is dominated by the charging/discharging of carriers in Ag nanocrystals. In addition, we demonstrate that the unipolar RS exhibits good performances, including large R off /R on ratio, high uniformity, long retention time, and multilevel storage potential. V C 2014 AIP Publishing LLC. [http://dx.

show abstract

Section: Resultsmentioning

confidence: 99%

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

Sun

Liu

Long

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The complexity of RS mechanism not only comes from its variety but also from the correlation between different mechanisms [61,62]. Zhang et al [63] reported the coexistence of metallic and hopping conduction at the low resistance state (LRS) of Ta 2 O 5-x /TaO y based RRAM, and three types of conduction behaviors were found by temperature-dependent measurements ranging from 5K to 250K.…”

Section: Complex Mechanismmentioning

confidence: 97%

An overview of materials issues in resistive random access memory

Zhu

Zhou

Guo

et al. 2015

Journal of Materiomics

122

View full text Add to dashboard Cite

Resistive random access memory (RRAM) is a very promising next generation non-volatile RAM, with quite significant advantages over the widely used silicon-based Flash memories. For RRAM, material with switchable resistance, working as the storage medium, is the most important part for the performance of the memory. In this review, as a start, some general hints for the materials selection are proposed. Then most recent studies on this emerging memory from the perspective of materials science are summarized: various materials with resistance switch (RS) behavior and the underlying mechanisms are introduced; as a complementary to the previous review articles, here the increasingly important role of computational materials science in the research of RRAM is presented and highlighted. By incorporating the framework of high-throughput calculation and multi-scale simulations, design process of new RRAM could be accelerated and more cost-effective.

show abstract

“…A much simpler alternative to increase storage density in RRAM devices is by making use of multilevel cell (MLC) storage technology which enables storing more than one bit per cell without reducing the physical device dimensions. This MLC is one of the most promising properties of RRAM which can significantly increase the memory storage density [83,[118][119][120][121][122][123][124][125]. Thus, instead of a single high and low resistance state (HRS and LRS), we can achieve multiple HRS and LRS, without changing the device dimensions.…”

Section: Multilevel Per Cell (Mlc) Storagementioning

confidence: 99%

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

2020

View full text Add to dashboard Cite

In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed. First, a brief overview of the field of emerging memory technologies is provided. The material properties, resistance switching mechanism, and electrical characteristics of RRAM are discussed. Also, various issues such as endurance, retention, uniformity, and the effect of operating temperature and random telegraph noise (RTN) are elaborated. A discussion on multilevel cell (MLC) storage capability of RRAM, which is attractive for achieving increased storage density and low cost is presented. Different operation schemes to achieve reliable MLC operation along with their physical mechanisms have been provided. In addition, an elaborate description of switching methodologies and current voltage relationships for various popular RRAM models is covered in this work. The prospective applications of RRAM to various fields such as security, neuromorphic computing, and non-volatile logic systems are addressed briefly. The present review article concludes with the discussion on the challenges and future prospects of the RRAM.

show abstract

Multilevel resistance switching in Cu/TaOx/Pt structures induced by a coupled mechanism

Cited by 45 publications

References 19 publications

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

An overview of materials issues in resistive random access memory

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Contact Info

Product

Resources

About