Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

Sun, Haitao; Liu, Qi; Long, Shibing; Lv, Hangbing; Banerjee, Writam; Liu, Ming

doi:10.1063/1.4898807

Cited by 44 publications

(25 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In this case, the room temperature peak‐valley current ratio of 1.07 has been observed in the Ag/Melanin/SS memristive device. Similar to our results, the NDR effect has been reported earlier in many switching devices . In the present case, charge trapping and detrapping near the Ag/Melanin interface is responsible for the NDR effect …”

Section: Resultssupporting

confidence: 93%

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Gurme

Dongale

Surwase

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

A Ag/melanin/SS memristive device with remarkably good endurance and retention properties is demonstrated using natural melanin isolated from bacterium Aeromonas sp. SNS. Purified and characterized melanin is used for the development of a non‐volatile memory device. The device is operated under electroforming‐free mode and requires only ±0.6 V resistive switching voltage. 2 × 104 switching cycles endurance is achieved with an approximately 10X memory window at 0.2 V read voltage. In addition to this, the low resistance state (LRS) and high resistance state (HRS) are stable over 103 s without any observable degradation in the resistance states. Standard deviation and coefficient of variation of LRS and HRS are very small compared to other memory devices reported in the literature. Furthermore, the Ag/melanin/SS memristive device shows rich nonlinear behavior and possesses negative differential resistance effect during positive bias. Charge transportation in the device is due to the ohmic and space charge limited current. The formation and breaking of the conductive filament are responsible for the bipolar resistive switching effect due to hybrid electronic‐ionic charge transportation. Rich I–V characteristics, very low switching voltage, and remarkable nonvolatile memory performance make melanin a strong candidate for next generation organic non‐volatile memory devices.

show abstract

Section: Resultssupporting

confidence: 93%

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Gurme

Dongale

Surwase

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Due to the trapping and detrapping effect, the multi-island tunneling systems show resistive switching behavior with NDR effect. 72,73 Although it may be possible that such a mechanism is taking place, our data and modeling analysis suggests F-N tunneling mechanism under that conditions examined. As a result, future detailed studies are required to understand the resistive switching behavior of TiO 2 -CZTS systems.…”

Section: Resistance = Aementioning

confidence: 87%

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The resistive switching behavior of TiO 2 based electronic devices have been extensively investigated the last two decades due to their low cost and potential applications in high speed electronic devices. However, the randomness in switching behavior and uncertainty in conducting filament formation often restricts their usage for long-term applications. A duality in current transport mechanism was observed when nano-architectural parameters of the TiO 2 memory resistance device were altered. TiO 2 nanotube-CZTS nanocrystals based devices exhibit Fowler-Nordheim quantum tunneling, whereas TiO 2 nanocrystals-CZTS thin film based devices exhibit space charge limited conduction. Temperature dependent electrical studies indicate that polaronic transport is one of the phenomena assisting in electrical conduction. Electronic band information suggests that tunneling between CZTS and TiO 2 is indirect. A unique interface state between two adjacent materials seems to be responsible for the negative differential resistance (NDR) behavior of Low cost electrical bistability due to nonlinear conducting behavior has been an exciting area of research in recent years. [1][2][3][4][5][6][7][8] Several new devices such as tunnel diodes, multivibrators, and organic bistable systems have been investigated.1-7 Some of these devices possess unique I-V characteristics and non-conventional current transport mechanisms. Devices showing negative differential resistance (NDR) can be utilized for various low power applications such as radio frequency, logic and neuromorphic devices, fast switching, and high frequency oscillators.1-7,9-11 Materials such as carbon nanotubes, graphene, and conducting polymers have been recently utilized for room temperature NDR behavior or memory resistance applications. [1][2][3][4][5][6][7]9,10,12,13 Memory resistors can be fabricated using semiconductors and metal oxides such as Nb 2 O 5 , NiO, ZnO and TiO 2 .14 Thin film memory resistors offer advantages such as high switching speed and low energy electroforming. The use of thin film TiO 2 in a memory resistor has demonstrated potential dependent on/off switching when sandwiched between two platinum contacts. 15 It is generally believed that a memoresistance effect in TiO 2 nanostructures is based on the mobility of vacancies or defects. [15][16][17] The conduction mechanism is based on the formation and transport of conducting filament (CF). A conducting filament generally consists of oxygen vacancies that form or break due to electric field driven migration. Because of randomness and uncertainty in CF's formation, resistance-switching (RS) devices often perform randomly and thus have less control over operating parameters. Another report suggests that Joule heating is also a major cause for current controlled negative resistance behavior. 18 This behavior relies on polaronic transport in TiO 2 . In polaronic transport, the hopping motion of small polarons up to certain temperatures influences conduction. Several other mechanisms and switching modes such...

show abstract

“…37,38 In the RRAM, it is one of the conduction process reported by several studies. 39,40 Although the tunneling phenomenon starts at 1 MV/cm, the F–N tunneling probability always dominates at the higher E > 10 MV/cm. 41 The thickness of the modified Al 2 O 3 tunnel barrier (TB modified ) at higher E can be approximated by the following equation…”

Section: Discussionmentioning

confidence: 99%

Variability Improvement of TiO_x/Al₂O₃ Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al₂O₃ Dielectric Material

Banerjee

et al. 2017

ACS Omega

Self Cite

View full text Add to dashboard Cite

Variability control over the resistive switching process is one of the key requirements to improve the performance stability of the resistive random access memory (RRAM) devices. In this study, we show the improvement of the variability of the resistive switching operation in the TiO x /Al 2 O 3 bilayer RRAM devices. The achievement is based on the thickness engineering of the Al 2 O 3 layer. A thick Al 2 O 3 dielectric actively takes part to control the resistive switching behavior; on the contrary, the ultrathin layer of Al 2 O 3 behaves as the tunnel barrier in the structure. At lower voltage, the low resistance state conductions follow the trap-assisted tunneling and Fowler–Nordheim tunneling for the thick and thin Al 2 O 3 RRAMs, respectively. Finally, the variation control in device forming, SET voltage distribution, high resistance state, low resistance state, and resistance ratio is achieved with the TiO x /Al 2 O 3 bilayer RRAM devices by interfacial band engineering with an ultrathin Al 2 O 3 dielectric material.

show abstract

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

Cited by 44 publications

References 42 publications

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Variability Improvement of TiO_x/Al₂O₃ Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al₂O₃ Dielectric Material

Contact Info

Product

Resources

About

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

Cited by 44 publications

References 42 publications

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Duality in Resistance Switching Behavior of TiO2-Cu2ZnSnS4Device

Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material

Contact Info

Product

Resources

About

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Variability Improvement of TiO_x/Al₂O₃ Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al₂O₃ Dielectric Material