Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters

Electronic states in GaAs photoconverters with InGaAs quantum well-dots

“…This behavior is in good agreement with our previously published data and discussed in detail in Ref. 26.…”

“…In this temperature range the average QWD photocurrent for SC with 5 QWD layers is 4.7 times higher than for SC with 1 QWD layer, whereas for 10 layers this ratio is 7.4 due to the reasons discussed in Ref. 26. When temperature decreases from 120 K to 80 K the SC with 5 QWD layers shows sharper drop in the total photocurrent as compared to the SC with 1 and 10 QWD layers (Fig.…”

“…Recently, we observed an enhancement of electron and hole confinement energy in QWDs with increase in the number of vertically stacked layers of QWDs. 26) This effect was also experimentally observed for QDs, 7,15,27) but it has not been investigated in detail. In this letter, we study electronic states in QWD structures at various temperatures and apply theoretical simulations of electronic states in symmetrical QW for describing the obtained data.…”

“…Recently, we demonstrated novel nanostructure with mixed dimensionality, which is formed during MOVPE (metalorganic vapor phase epitaxy) deposition of several monolayers (ML) of In 0.4 Ga 0.6 As on vicinal GaAs substrates. [23][24][25][26] Such nanostructures represent a dense array of In-rich regions inside In-depleted residual quantum well and are referred below as quantum well-dots (QWDs). The use of the QWDs in a single-junction GaAs SC has allowed expanding its spectral sensitivity from 860 nm up to 1100 nm (1.127 eV) and provided a record high increase in the photocurrent of 4.6 mA cm −2 (AM1.5D).…”

Бимодальность в спектрах электролюминесценции InGaAs квантовых яма-точек

“…Кроме того, имеется возможность последовательно выращивать более 15 слоев КЯТ без образования дислокаций, что в случае КЯ требует использования технологически сложных методов компенсации упругих напряжений. Вышеперечисленные особенности КЯТ позволили использовать их в GaAs фотоэлектрических преобразователях, показавших рекордный прирост фототока [4], а также микродисковых лазерах, продемонстрировавших рекордно высокую выходную мощность и быстродействие [5,6]. В силу относительной новизны и большой сложности адекватного компьютерного моделирования КЯТ еще мало изучены, что делает актуальным детальное исследование их свойств.…”