Electronic states in GaAs photoconverters with InGaAs quantum well-dots

Abstract

Studies of electronic transitions in the photoconverters with In0.4Ga0.6As quantum well-dots (QWD) layers have been carried out. It is shown that the quantum yield and electroluminescence spectral peaks are well described by e1-lh1 and e1-hh1 optical transitions in the quantum well with the same average composition and thickness. The energy of the optical transitions shifts toward longer wavelengths with an increase in the number of QWD layers. The calculated shifts of electron and hole levels due to the redistribution of elastic strain between In0.4Ga0.6As QWDs and GaAs spacer layers demonstrated a very good agreement with the experimental data.