Multijunction solar cells incorporating group IV SiGeSn alloys

Caño, Pablo; Lombardero, Iván; Rey‐Stolle, Ignacio; Johnson, Andrew; Hoffman, Rick

doi:10.1109/cde.2017.7905233

Cited by 3 publications

(2 citation statements)

References 8 publications

(9 reference statements)

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“…Furthermore, this ternary material can be used as an intermediate buffer layer to realize monolithic III-V structure on silicon substrate, paving the path for next generation low cost MJ devices [13]. In spite of these encouraging prospective, the most recent integrations of SiGeSn with III-V for MJ solar cells have been accomplished by using two different growth equipment: a CVD reactor for the growth of SiGeSn and a MOVPE growth chamber for the deposition of the remaining part of the cell structure [14], [15]. The reason for such a choice is mostly due to the "cross contamination" among the III-V elements and the IV elements of the periodic table [16].…”

Section: Introductionmentioning

confidence: 99%

MOVPE SiGeSn development for the next generation four junction solar cells

Timò¹,

Abagnale²,

Armani³

et al. 2018

AIP Conference Proceedings

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The Multijunction (MJ) monolithic approach is very attractive for a competitive concentrating photovoltaic (CPV) technology; it has been successfully applied for InGaP/GaInAs/Ge triple-junction structures but it is more difficult to be exploited for manufacturing 4-junction solar cells, in particular when III-V and IV elements are both used. So far, the integration of the 1 eV SiGeSn material in the lattice-matched InGaP/GaInAs/Ge triple-junction structure has required the utilization of two different growth apparatus, nearly losing the economic advantage of the monolithic architecture, owing to the related higher capital expenditure. The central technical challenge for realizing InGaP/GaInAs/SiGeSn/Ge solar cell at low cost, with an industrial approach, lies in the growth of III-V and IV elements in the same MOVPE equipment, by solving the "cross contamination" problem among the III-V elements and the IV elements. In this contribution, for the first time, the results of the investigation concerning the growth of SiGe(Sn) and III-V compounds in the same MOVPE growth chamber are presented. The epitaxial layers have been characterized by XRD, SEM, TEM, EDX, SIMS and ECV profiling. It is eventually shown that by starting from a modification of the MOVPE equipment and by setting up proper growth condition the contamination of III-V elements in IV based materials can be drastically reduced from 10 20 cm-3 to 2*10 17 cm-3 , while the contamination of IV elements in III-V compounds can be reduced from 4-5*10 17 cm-3 to 6*10 16-3*10 14 cm-3 depending on the substrate used.

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Section: Introductionmentioning

confidence: 99%

MOVPE SiGeSn development for the next generation four junction solar cells

Timò¹,

Abagnale²,

Armani³

et al. 2018

AIP Conference Proceedings

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“…In some designs, a SiGeSn alloy have also been employed [Caño'17]. Then, a GaAsP subcell can be grown on top.…”

Section: Introductionmentioning

confidence: 99%

Desarrollo de células solares multiunión de semiconductores del grupo III-V sobre sustratos de silicio

Fernández¹

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La segunda parte de la tesis presenta la integración de los III-V sobre silicio a través de aleaciones del grupo IV. Para ello, se ha desarrollado una célula solar tándem de GaAsP/SiGe sobre sustratos de silicio. Además, en esta arquitectura la aproximación se lleva a cabo a partir de capas amortiguadoras reversas, que no se habían usado para aplicaciones fotovoltaicas. En esta parte se presenta la caracterización de material, los resultados de los dispositivos y los diferentes problemas que aparecen. También se incluye una posterior mejora con la incorporación de una capa de silicio poroso.

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