Desarrollo de células solares multiunión de semiconductores del grupo III-V sobre sustratos de silicio

Fernández, Pablo Caño

doi:10.20868/upm.thesis.67408

Cited by 3 publications

(4 citation statements)

References 7 publications

(14 reference statements)

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“…In this respect we reduced the complexity by only exploring parameters in limited ranges. A detailed description of the optimization process is out of the scope of this paper and can be accessed elsewhere [24]. Just as a brief indication, we used in situ measurements using reflectance anisotropy spectroscopy (RAS) and ex situ measurements using AFM to benchmark process conditions.…”

Section: Process Rationalementioning

confidence: 99%

Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

et al. 2021

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Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a silicon substrate. The optimization of this nucleation has been pursued for decades, since it can form a virtual substrate to grow monolithically III-V devices. In this work we present a GaP nucleation approach using a standard MOVPE reactor with regular precursors. This design simplifies the epitaxial growth in comparison to other routines reported, making the manufacturing process converge to an industrial scale. In short, our approach intends to mimic what is done to grow multijunction solar cells on Ge by MOVPE, namely, to develop a growth process that uses a single reactor to manufacture the complete III-V structure, at common MOVPE process temperatures, using conventional precursors. Here, we present the different steps in such GaP nucleation routine, which include the substrate preparation, the nucleation itself and the creation of a p-n junction for a Si bottom cell. The morphological and structural measurements have been made with AFM, SEM, TEM and Raman spectroscopy. These results show a promising surface for subsequent III-V growth with limited roughness and high crystallographic quality. For its part, the electrical characterization reveals that the routine has also formed a p-n junction that can serve as bottom subcell for the multijunction solar cell.

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Section: Process Rationalementioning

confidence: 99%

Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

et al. 2021

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“…The Fernández'model [15,16] is also based on a 1D model of a three-junction cell (GaInP/GaInAs/Ge). The cell current is only limited by the two upper sub-cells GaInP and GaInAs respectively called « Top » and « Middle ».…”

Section: Fernández'model (2013)mentioning

confidence: 99%

“…Thus, five combinations of models with inputs such as DNI, T air , v and AM in Eq (16) and in Eq (17) coupled with Eq (21) or (22) were tested. Then spectral inputs such as SMR and SF were added in model 3 and 7 in view to evaluate their contribution to the improvement (or not) to the reliability of the model.…”

Section: Power Modelsmentioning

confidence: 99%

Overview of electrical power models for concentrated photovoltaic systems and development of a new operational model with easily accessible inputs

Benhammane

Notton

Pichenot

et al. 2021

Renewable and Sustainable Energy Reviews

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“…o Number 4: using for fj Thus, five combinations of models with inputs such as DNI, Tair, v and AM in Eq (16) and in Eq (17) coupled with Eq (21) or (22) were tested. Then spectral inputs such as SMR and SF were added in model 3 and 7 in view to evaluate their contribution to the improvement (or not) to the reliability of the model.…”

Section: Power Modelsmentioning

confidence: 99%

Overview of electrical power models for concentrated photovoltaic systems

Voarino

Benhammane

Notton

et al. 2020

AIP Conference Proceedings

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The utilization of multi-junction solar cells with high efficiency is still not widespread for terrestrial power applications. These solar cells, composed by several material layers, reach high efficiencies but its cost is expensive, more of 100 higher than classical silicon solar cells. Thus, one solution consists to use reduced sizing solar cells associated with optics mounted on solar tracker to concentrate the solar beam. Numerous meteorological parameters such as beam solar irradiance, ambient temperature and air mass and especially spectral characteristics of sun radiation are involved in the conversion process and are generally used as inputs in power models. Several models from literature, different by their form and by the number and type of input variables, are presented; based on this state-of-art, some similar models are selected and tested on two experimental CPV systems located on two different sites, Ajaccio and Le Bourget du Lac. Then, an operational model of electrical power using inputs easily measured and available for a solar CPV plant operator is developed. It could be used as a decision-aided tool for investors in providing an estimation of the energy production capacity of the CPV systems on the future implantation site. This established model based on data measured on the CPV system in Ajaccio estimates the produced power with a root mean square error of about 5% on the two sites using only a reduced number of inputs.

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Desarrollo de células solares multiunión de semiconductores del grupo III-V sobre sustratos de silicio

Cited by 3 publications

References 7 publications

Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

Overview of electrical power models for concentrated photovoltaic systems and development of a new operational model with easily accessible inputs

Overview of electrical power models for concentrated photovoltaic systems

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