Multifunctional cadmium single source precursor for the selective deposition of CdO or CdS by a solution route

Abstract

We report on the interesting properties of a novel single precursor, Cd(tta)2 x tmeda (Htta = 2-thenoyl-trifluoroacetone, tmeda = N,N,N',N'-tetramethylethylenediamine), ideally suited for the selective and reproducible fabrication of pure quality films of CdS or CdO through a simple solution process.

Metal–Organic Derivatives with Fluorinated Ligands as Precursors for Inorganic Nanomaterials

“…144 As expected, the cubic CdO phase was observed when the thermal treatments were carried out under O 2 atmosphere. Thermal treatments under nitrogen (100 sccm) resulted in two different phases, depending on the reaction temperature.…”

“…532 The complex [Cd(ttac) 2 (TMEDA)] was used as a multifunctional single source precursor, which reproducibly and selectively yielded CdO or CdS films, depending on the processing parameters. 144 The SEM images showed a nanostructured surface with grain dimensions less than 100 nm in diameter for CdS films, which was completely different from the larger rounded grains morphologies observed for the CdO films. The phase pure copper(I) nitride Cu 3 N was deposited in the temperature range 250−400°C by CVD using Cu(hfac) 2 , NH 3 , and water; the latter reagent, that is, H 2 O, was instrumental in increasing the film growth rate on the SiO 2 substrate.…”

Solution based CVD of main group materials

“…2 Low temperature growth is important because these II-VI materials interdiffuse and form defects at temperatures above 500 1C. Thin films of these materials have also been deposited by other solution based methods such as spray pyrolysis, 20,21 spin coating, 22 electrostatic assisted aerosol jet deposition, 23 chemical bath deposition 24,25 and solution growth. For example, mixed alkyl/dithio-or diseleno-carbamates and xanthanates [12][13][14][15][16] are potential precursors to II-VI materials as they provide access to lower deposition temperatures and zinc selenide, cadmium sulfide and cadmium selenide thin films have been deposited from compounds, of the type [RM(E 2 CNEt 2 )] 2 (M = Zn, Cd, E = S, Se, R = Me, CH 2 CMe 3 ) 17 via MOCVD.…”

Solvothermal synthesis of hexagonal CdS nanostructures from a single-source molecular precursor

“…The single-source molecular precursors to CdS that have been investigated in this context include Cd(SCNHNH 2 ) 2 Cl 2 [18], [Cd-(DDTC) 2 ] 2 [19][20][21][22], cadmium complexes of N,Ndioctylthiourea, N,N -diocyclohexylthiourea, N,N -diisopropylthiourea, N,N -tetramethylthiourea, dithiobiurea, ethylxanthic acid, thiosemicarbazide, selenosemicarbazide [23], Cd(tta) 2 · tmeda [24], dialkyldithiocarbamate [25,26], bis(diethylmo- nothiocarbamato) cadmium(II) [27], etc. Thermolysis of these precursors in either refluxing organic solvents [18,19,23], porous Vycor glass [20], monosurfactant system [21], gold nanoclustercatalyzed vapor-liquid-solid process [22], nitrogen atmosphere [24] or MOCVD [25][26][27][28][29], etc. can lead to CdS fine powders or thin films.…”

“…Among the numerous methods developed for the controllable synthesis of metal chalcogenide materials, the singlesource molecular precursor (an individual reactant molecule containing all the elements required in the final product) route undoubtedly has several appealing features [18][19][20][21][22][23][24][25][26][27][28][29][30]. First of all, it offers the potential advantages of mildness, safety and simplified fabrication procedure and equipment, when compared with the use of multiple sources requiring exact control over stoichiometry, and it is a one-step synthesis compatible with the metallorganic chemical vapor deposition [25][26][27][28][29].…”