Multidimensional CMOS in-plane stress sensor

Bartholomeyczik, J.; Ruther, Patrick; Oliver, Paul

doi:10.1109/icsens.2003.1278936

Cited by 12 publications

(12 citation statements)

References 23 publications

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“…Li et al also developed piezoresistive shear stress sensors using oblique ion-implantation technique, optimizing the geometry of the piezoresistors and the sensors, as well as the dopant concentration and bias voltage [125], [286]. Other piezoresistive 3D stress sensors have been used to measure multi-axis tactile or traction forces for biological [287]–[289], robotic [290], and device packaging applications [59]–[61], [69], [153], [291]–[294]. Noda et al fabricated 2-D shear stress sensors for tactile sensing with standing piezoresistive cantilevers embedded in polydimethylsiloxane (PDMS) [295].…”

Section: Devices and Applicationsmentioning

confidence: 99%

“…Ishihara et al developed the first CMOS integrated silicon diaphragm pressure sensors in 1987 [304]. Since then, CMOS circuitry has been integrated with piezoresistive MEMS devices, such as AFM [63], [195], [205], [216], [219], [305]–[307] and force or stress sensors [59], [61], [68], [290], [292], [294], [308]–[310]. Mayer et al determined three piezoresistive coefficients, π 11 , π 12 , and π 44 , of an n + diffusion of a commercial piezoresistive CMOS chip using a novel method by subjecting the chip to three different stress fields [311].…”

Section: Devices and Applicationsmentioning

confidence: 99%

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Review: Semiconductor Piezoresistance for Microsystems

et al. 2009

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Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.

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Section: Devices and Applicationsmentioning

confidence: 99%

Section: Devices and Applicationsmentioning

confidence: 99%

Review: Semiconductor Piezoresistance for Microsystems

et al. 2009

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“…For the lightly doped n-well Hall device the temperature coefficients are approximately α ≈ 6 × 10 −3 K −1 and β ≈ 14 × 10 −6 K −2 . Due to this strong resistivity change with temperature compared to a relatively small change of resistivity with mechanical stress, the parasitic thermal effect needs to be taken into account in (8).…”

Section: Thermal Effectsmentioning

confidence: 99%

“…Integrated solutions allow for a reduction of the stress-related drift to 1% [3], wherein separate devices are used to measure the stress and the magnetic field. Plate-like four-contact devices have been used as stress sensors exploiting both the piezo-Hall effect [4,5] as well as the piezoresistance and pseudo-Hall effect [6][7][8][9]. Unfortunately the stress components σ xx − σ yy and σ xy obtained from [6][7][8][9] are not useful to compensate the piezo-Hall effect.…”

Section: Introductionmentioning

confidence: 99%

A combined hall and stress sensor for highly accurate magnetic field sensing free from the piezo-Hall effect

Huber

Raman

Wiel³

et al. 2015

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

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This paper reports the use of a plate-like four-contact device for the simultaneous measurement of the magnetic field via the Hall effect and of the mechanical stress via the piezoresistance effect. The mechanical stress measurement is used to compensate for the piezo-Hall effect, i.e., the undesired crosssensitivity of the magnetic sensitivity to mechanical stress. Thereby the drift of the magnetic sensitivity was reduced by a factor of 20 to 0.15% for mechanical stresses up to 75 MPa and temperatures between 10 • C and 60 • C.

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“…Piezoresistivity is a commonly used transduction mechanism for microelectromechanical systems [1] such as force sensors [2]–[7], pressure sensors [8]–[12], stress sensors [13]–[15], microphones [16], accelerometers [17], [18], temperature sensors [19], [20], and chemical sensors [21]–[23]. Piezoresistive sensors have several desirable characteristics such as straightforward fabrication, simple signal-conditioning circuitry, relatively small size, and large dynamic range.…”

Section: Introductionmentioning

confidence: 99%

Piezoresistive Cantilever Performance—Part I: Analytical Model for Sensitivity

Park

Doll

Pruitt

2010

J. Microelectromech. Syst.

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An accurate analytical model for the change in resistance of a piezoresistor is necessary for the design of silicon piezoresistive transducers. Ion implantation requires a high-temperature oxidation or annealing process to activate the dopant atoms, and this treatment results in a distorted dopant profile due to diffusion. Existing analytical models do not account for the concentration dependence of piezoresistance and are not accurate for nonuniform dopant profiles. We extend previous analytical work by introducing two nondimensional factors, namely, the efficiency and geometry factors. A practical benefit of this efficiency factor is that it separates the process parameters from the design parameters; thus, designers may address requirements for cantilever geometry and fabrication process independently. To facilitate the design process, we provide a lookup table for the efficiency factor over an extensive range of process conditions. The model was validated by comparing simulation results with the experimentally determined sensitivities of piezoresistive cantilevers. We performed 9200 TSUPREM4 simulations and fabricated 50 devices from six unique process flows; we systematically explored the design space relating process parameters and cantilever sensitivity. Our treatment focuses on piezoresistive cantilevers, but the analytical sensitivity model is extensible to other piezoresistive transducers such as membrane pressure sensors.

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Multidimensional CMOS in-plane stress sensor

Cited by 12 publications

References 23 publications

Review: Semiconductor Piezoresistance for Microsystems

Review: Semiconductor Piezoresistance for Microsystems

A combined hall and stress sensor for highly accurate magnetic field sensing free from the piezo-Hall effect

Piezoresistive Cantilever Performance—Part I: Analytical Model for Sensitivity

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