Multiband Simulation of Quantum Electron Transport in Nano-Scale Devices Based on Non-Equilibrium Green's Function

Fitriawan, Helmy; Souma, Satofumi; Ogawa, Masahiro; Miyoshi, Tomomitsu

doi:10.7567/ssdm.2006.p-3-9

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2008

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“…In order to obtain self-consistent solution, the iterative procedure between the Green's is employed [13].…”

Section: Simulation Methodsmentioning

confidence: 99%

Quantum electron transport modeling in uniaxially strained silicon channel of double‐gate MOSFETs

Fitriawan

Ogawa

Souma

et al. 2008

Phys. Status Solidi (c)

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This paper reports the calculation of quantum electron transport in double‐gate metal oxide semiconductor field effects transistors (MOSFETs) with uniaxially strained silicon channel. The calculation is formulated based on multiband non‐equilibrium Green's function (NEGF) method coupled self‐consistently with the Poisson equation. The empirical sp3s * tight binding approximation (TBA) model with nearest neighbor coupling is employed to obtain more realistic band structure in the formulation. We compare the carrier transport characteristics of simulated MOSFETs with strained channel to those of without strain. The simulation results show that the presence of uniaxially strain induce the current enhancement in the devices. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In order to obtain self-consistent solution, the iterative procedure between the Green's is employed [13].…”

Section: Simulation Methodsmentioning

confidence: 99%

Quantum electron transport modeling in uniaxially strained silicon channel of double‐gate MOSFETs

Fitriawan

Ogawa

Souma

et al. 2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method

Fitriawan

Ogawa

Souma

et al. 2008

IEICE Transactions on Electronics

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Multiband Simulation of Quantum Electron Transport in Nano-Scale Devices Based on Non-Equilibrium Green's Function

Cited by 2 publications

References 3 publications

Quantum electron transport modeling in uniaxially strained silicon channel of double‐gate MOSFETs

Quantum electron transport modeling in uniaxially strained silicon channel of double‐gate MOSFETs

Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method

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