Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method

Fitriawan, Helmy; Ogawa, Masahiro; Souma, Satofumi; Miyoshi, Tomomitsu

doi:10.1093/ietele/e91-c.1.105

Cited by 5 publications

(3 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, the on-currents at higher V G conditions are almost the same for both approaches because thermal injection is a dominant carrier injection process at the on-state. Furthermore, the subthreshold swings (SS) are calculated to compare with those from ballistic NEGF method (29,30) as shown in Fig. 11.…”

Section: Si Nanowire Transistorsmentioning

confidence: 99%

Device Physics and Simulation Techniques for Nanoscale SOI-MOSFETs

Tsuchiya¹,

Yamada²,

Souma³

et al. 2009

ECS Trans.

View full text Add to dashboard Cite

The silicon-based planar CMOS technology is expected to face fundamental limits in the near future, and therefore, new types of nanoscale devices are being investigated aggressively. To understand the device physics and assess their performance limits, new types of simulation techniques considering quantum mechanical phenomena, carrier's ballistic transport and atomistic effects are also needed. In this paper, we present our recent approaches toward the quantum and atomistic transport modeling, and make a performance projection of emerging nano-MOS transistors employing new device structures and new channel materials.

show abstract

Section: Si Nanowire Transistorsmentioning

confidence: 99%

Device Physics and Simulation Techniques for Nanoscale SOI-MOSFETs

Tsuchiya¹,

Yamada²,

Souma³

et al. 2009

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…Therefore it is important to reduce the computational time required for NEGF device simulations; for instance, by applying information-scientific viewpoint [11,12,13,14]. As a representative example, consider double-gate MOSFET (DG-MOSFET) [15,16,17,18,19,20,21]. The precise two-dimensional distribution pattern of the electrostatic potential and the carrier density in the x-z plane (see Fig.…”

Section: Introductionmentioning

confidence: 99%

Acceleration of nonequilibrium Green’s function simulation for nanoscale FETs by applying convolutional neural network model

Souma

Ogawa

2020

IEICE Electron. Express

View full text Add to dashboard Cite

We investigate the application of convolutional neural networks (CNNs) to accelerate quantum mechanical transport simulations (based on the nonequilibrium Green's function (NEGF) method) of double-gate MOSFETS. In particular, given a potential distribution as input data, we implement the convolutional autoencoder to train and predict the carrier density and local quantum capacitance distributions. The results indicate that the use of a single trained CNN model in the NEGF self-consistent calculation along with Poisson's equation produces accurate potentials for a wide range of the gate lengths, and all within a significantly shorter computational time than the conventional NEGF calculations.

show abstract

“…In a quantum transport regime, not only the device geometric shape, but also the electron's wave or particle natures directly appear on the device characteristics. So, quantum-corrected Monte Carlo (MC) method [2,3], Wigner function model [4] and non-equilibrium Green's function (NEGF) method [5] are widely used. Further scaling down into atomistic regime requires new challenges to establish more elaborate quantum mechanical model based on the first-principles theory.…”

mentioning

confidence: 99%