“…Therefore it is important to reduce the computational time required for NEGF device simulations; for instance, by applying information-scientific viewpoint [11,12,13,14]. As a representative example, consider double-gate MOSFET (DG-MOSFET) [15,16,17,18,19,20,21]. The precise two-dimensional distribution pattern of the electrostatic potential and the carrier density in the x-z plane (see Fig.…”