Multi-oxide active layer deposition using Applied Materials Pivot array coater for high-mobility metal oxide TFT

Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability

“…The incorporation of defect binders such as Hf or N can efficiently suppress the formation of V O defects and enhance the bias stress stability. − However, such dopants also serve as electron suppressors, which in turn degrade the transporting properties. The bilayer-channel structure, which forms two active carrier transport pathways by insertion of a subchannel layer, is effective in boosting up the field-effect mobility (μ FE ) and suppressing the trap-induced gate bias stress instability. − However, an energy barrier is inevitably formed at the bilayer-channel interface, which retards depletion. Meanwhile, the improvements in photobias stability were limited since the V O defects in the IGZO channel bulk and back surface regions were universally compensated by O self-doping, and their concentrations remained high.…”