Multi-Level Memory Comprising Low-Temperature Poly-Silicon and Oxide TFTs

Kim, Jongbin; Chung, Hongsuk; Lee, Seung-Woo

doi:10.1109/led.2020.3037059

Cited by 13 publications

(5 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The reported leakage current of IGZO TFT could be as low as 10 −19 A µm −1 [11], which enables eDRAM with retention of 400 s without extra capacitor fabricated. The low leakage characteristic also enables reliable multi-level storage without frequent refresh [12,67], where 16-level storage can be guaranteed for 17 d with a 7.1 fF cell capacitor [12]. Although the retention of such storage does not reach that of NVMs, it can be regarded as unchanged in some edge computing applications.…”

Section: Almost-nonvolatile Analog Memorymentioning

confidence: 99%

Computing-in-memory with thin-filmtransistors: challenges and opportunities

Tang¹,

Liu²,

Li³

et al. 2022

Flex. Print. Electron.

View full text Add to dashboard Cite

Thin-film transistor (TFT) has attracted enormous interests recently for its great potential in a wide range of edge computing applications, benefitting from its large-area low-cost flexible fabrications, and well integration with sensors and displays. With the support of in-situ processing of sensor data, TFT-based edge systems show their advantages in large-scale dense sensing with real-time energy-efficient processing and interaction, and more excitingly, it provides the opportunity of eliminating the massive data transfer to the cloud servers. However, the design of high-performance processing modules based on TFT is difficult, due to large device variation, poor stability, and low mobility. Computing-in-memory (CiM), which has been proposed recently as a high-efficiency high-parallelism computing approach, is expected to improve the capacity of TFT-based edge computing systems. In this survey, various recent works on TFT-based CiM have been summarized, showing the superiority to conventional processing flow by efficient in-memory analog computation with mitigation of data transfer, and reduced ADC usage for sensor data. With both opportunities and challenges, the design space and trend of TFT-based CiM to be explored are then described. Finally, further development and co-optimization from device to system are discussed for flourishing of the next-generation intelligent TFT-based edge system.

show abstract

Section: Almost-nonvolatile Analog Memorymentioning

confidence: 99%

Computing-in-memory with thin-filmtransistors: challenges and opportunities

Tang¹,

Liu²,

Li³

et al. 2022

Flex. Print. Electron.

View full text Add to dashboard Cite

show abstract

“…This section reviews the memory cell comprising LTPO TFTs proposed in [24]. The memory cell consists of two transistors and one capacitor, as shown in Figure 1a.…”

Section: Review Of Memory Cell Comprising Ltpo Tftsmentioning

confidence: 99%

“…V D and V S are drain and source voltages of the memory cell, respectively, which can be used for bit-line voltages of the memory cell. Figure 1b shows simulated transfer characteristics of T C depending on the programmed level of V PGD [24]. After programming V PGD through T PG , the voltage level of V RDA was swept and V DS of −0.1 V was applied.…”

Section: Review Of Memory Cell Comprising Ltpo Tftsmentioning

confidence: 99%

A Low-Power Memory-in-Pixel Circuit for Liquid Crystal Displays Comprising Low-Temperature Poly-Silicon and Oxide Thin-Film Transistors

Kim¹,

Lee²,

Chung³

et al. 2020

Electronics

Self Cite

View full text Add to dashboard Cite

In this paper, a new pixel structure using low-temperature polycrystalline silicon and oxide (LTPO) thin-film transistors (TFTs) for low-power liquid crystal displays (LCDs) is proposed. The extremely low off-state current of oxide semiconductor TFTs enables the proposed circuit to operate at a very low frame frequency of 1/60 Hz, so that the power consumption can be significantly reduced. In addition, the low-temperature polycrystalline silicon TFTs with high reliability directly drive pixels, which can achieve stable and flicker-free LCDs. The proposed circuit is fabricated using the LTPO TFT backplane and successfully verified by simulation and measurement results. The measurement results prove that the proposed circuit operates well without further programming for 60 s, and the power consumption in the panel (except backlight power) can be reduced to 0.02% of that of conventional LCD.

show abstract

“…Recent pixel circuits have utilized low-temperature polycrystalline silicon (LTPS) and oxide (together -LTPO) TFTs, but are still limited by LTPS technology. While LTPS provides high mobility and high on-state current [4][5][6][7], it suffers from volatility and high leakage current [8][9][10][11]. Oxide TFTs have overcome the high leakage current, and make great switching TFTs [12][13][14][15], but most oxide TFTs are unable to reach the required mobility for high frame rate (HFR) performance.…”

Section: Introductionmentioning

confidence: 99%