A Low-Power Memory-in-Pixel Circuit for Liquid Crystal Displays Comprising Low-Temperature Poly-Silicon and Oxide Thin-Film Transistors

Abstract

In this paper, a new pixel structure using low-temperature polycrystalline silicon and oxide (LTPO) thin-film transistors (TFTs) for low-power liquid crystal displays (LCDs) is proposed. The extremely low off-state current of oxide semiconductor TFTs enables the proposed circuit to operate at a very low frame frequency of 1/60 Hz, so that the power consumption can be significantly reduced. In addition, the low-temperature polycrystalline silicon TFTs with high reliability directly drive pixels, which can achieve stable and flicker-free LCDs. The proposed circuit is fabricated using the LTPO TFT backplane and successfully verified by simulation and measurement results. The measurement results prove that the proposed circuit operates well without further programming for 60 s, and the power consumption in the panel (except backlight power) can be reduced to 0.02% of that of conventional LCD.

Reversible Molecular Conformation Transitions of Smectic Liquid Crystals for Light/Bias-Gated Transistor Memory

“…This durability makes smectic liquid crystals ideal for use in industry and research. Not only in these traditional electronic products, but smectic liquid crystals have also found extensive applications in electronic devices, such as field-effect transistors, − solar cells, − and nonvolatile memory devices. , Transistor memory has evolved from field-effect transistors by adding an additional memory layer; they possess different mechanisms, such as floating-gate, charge-trapping, and ferroelectric dielectrics . Recently, photo memory has shown many advantages because of the perspective of developing light-assisted multibit data storage in a single memory cell with a high memory access speed.…”

A Large-Size HfO2 Based RRAM Structure Suitable for Integration of One RRAM with One InGaZnO Thin Film Transistor for Large-Area Applications

“…IGZO TFT is a mature technology with the advantages of low cost, high transparency, and good uniformity. [7][8][9] The integration of RRAM with IGZO TFT has various potential large-area applications, such as memory-in-pixel (MIP), [10][11][12] flexible electronics, 13,14 and wearable devices. 15,16 Compared with the conventional MOSFET with a large fieldeffect mobility (i.e., a few hundreds of cm 2 V s −117 ), generally, the field-effect mobility of IGZO TFT is only in the range of tens of cm 2 V s −1 .…”

High-performance amorphous indium-gallium-zinc-oxide thin-film-transistor and its applications

“…The integration of ReRAM with IGZO TFT has various potential large-area applications, such as memory-in-pixel (MIP) [244]- [246] , flexible electronics [247], [248] ,…”