Multi-beam technology for defect inspection of wafer and mask

In this study, we generated 25 multielectron beam (MEB) using an InGaN photocathode with a negative electron affinity state irradiating with 25 multilaser beam. The uniformity of the MEB and the total electron beam current were evaluated. A laser beam was split into 25 laser beams using a spatial light modulator. The coefficient of variation (CV) of laser power was 20%. The CV of quantum efficiency was 1.1%. The CV of electron beam current was 12%, and the total current was about 1.2 μA. These results will enhance the development of the MEB-defect inspection using the InGaN photocathode.

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结构光照明显微成像技术在集成电路掩模检测中的应用

Wei Xin,

Liu Zexu,

Zhang Ziyi

et al. 2024

光学学报

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Multi-beam technology for defect inspection of wafer and mask

Cited by 3 publications

References 1 publication

Transmission imaging on a scintillator in a scanning electron microscope

Transmission imaging on a scintillator in a scanning electron microscope

Multiple electron beam generation from InGaN photocathode

结构光照明显微成像技术在集成电路掩模检测中的应用

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