1997
DOI: 10.4028/www.scientific.net/kem.132-136.1629
|View full text |Cite
|
Sign up to set email alerts
|

Mullite Based Oxidation Protection for SiC-C/C Composites in Air at Temperatures up to 1900 K

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
23
0

Year Published

2004
2004
2015
2015

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 20 publications
(24 citation statements)
references
References 0 publications
1
23
0
Order By: Relevance
“…A multi-layer coating is the logical choice to solve this problem. In multi-layer coatings, SiC was widely used as the bonding and buffer layer such as SiC/mullite [4] and SiC/borosilicate glass multi-layer coatings [5] because of its good compatibility with C/C composites. In SiC/ceramic multi-layer coatings, various outer ceramic layers using different coating technologies require the different structures of the SiC layer such as a porous structure in SiC/ MoSi 2 [6] and SiC/mullite-Al 2 O 3 [7] while a dense one in SiC/Si-W multi-layer coatings [8].…”
Section: Introductionmentioning
confidence: 99%
“…A multi-layer coating is the logical choice to solve this problem. In multi-layer coatings, SiC was widely used as the bonding and buffer layer such as SiC/mullite [4] and SiC/borosilicate glass multi-layer coatings [5] because of its good compatibility with C/C composites. In SiC/ceramic multi-layer coatings, various outer ceramic layers using different coating technologies require the different structures of the SiC layer such as a porous structure in SiC/ MoSi 2 [6] and SiC/mullite-Al 2 O 3 [7] while a dense one in SiC/Si-W multi-layer coatings [8].…”
Section: Introductionmentioning
confidence: 99%
“…These cracks originate from the CVD process and tend to close at temperatures above the CVD processing temperature (≥1100 • C). On heating from room temperature these cracks are open and the C/C-Si-SiC substrate starts to burn above 400 • C. 7 On approaching 1100 • C, the cracks in the SiC layer tend to close decreasing the oxidation rate of the substrate. One could also imagine that additional cracks can be formed on cooling down the sample due to different thermal expansion coefficients in the SiC layer leading to further burn-out of the substrate.…”
Section: Resultsmentioning
confidence: 98%
“…Additionally, we considered that all of infiltrated O 2 would react with C/C substrate for its low quantity. The diffusion behavior of O 2 can be expressed by Fick's first and second laws [16,17]:…”
Section: Oxidation Kinetics Analysis For the Coatingmentioning
confidence: 99%