MSI InP/InGaAs DHBT technology: beyond 40 Gbit/s circuits

Blayac, S.; Riet, M.; Benchimol, J.L.; Alexandre, François; Berdaguer, P.; Kahn, Myrtil L.; Pinquier, A.; Dutisseuil, E.; Moulu, J.; Kasbari, Abed-Elhak; Konczykowska, A.; Godin, J.

doi:10.1109/iciprm.2002.1014099

Cited by 30 publications

(7 citation statements)

References 8 publications

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“…InP-based HBT devices have long been recognized as an enabling technology for high-speed digital circuits for optical communication systems operating at 40 Gbit/s and beyond [1]. Among the advantages over other competing technologies is their superior electron transport properties, high breakdown voltage and low voltage operation capabilities.…”

Section: Introductionmentioning

confidence: 99%

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Large-Signal Modeling of High-Speed InP DHBTs using Electromagnetic Simulation Based De-embedding

Johansen

Krozer

Konczykowska

et al. 2006

2006 IEEE MTT-S International Microwave Symposium Digest

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We report on a consistent large-signal and small-signal modeling and parameter extraction method for high-speed InP DHBT valid to 110 GHz. Electromagnetic simulation is applied to predict the embedded network model caused by pad parasitics. Applying direct parameter extraction on the de-embedded device response leads to accurate small-signal model description of the InP DHBT. We have solved the problem of consistent transit time modeling by a two step process. A parameter extraction approach is described for the Agilent ADS2004A HBT model, which assures consistency between large-signal and bias-dependent small-signal modeling.

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Section: Introductionmentioning

confidence: 99%

“…Among the advantages over other competing technologies is their superior electron transport properties, high breakdown voltage and low voltage operation capabilities. Several impressive InP HBT circuit designs have been published recently [1]- [2].…”

Section: Introductionmentioning

confidence: 99%

Large-Signal Modeling of High-Speed InP DHBTs using Electromagnetic Simulation Based De-embedding

Johansen

Krozer

Konczykowska

et al. 2006

2006 IEEE MTT-S International Microwave Symposium Digest

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“…The transistors in this technology exhibit 180/210 GHz f t /f max , breakdown voltage BV ceo > 7V and yield better than 99% [9]. The technology also offers three Au/Ti metallization layers, Ti resistors, and SiN metal-insulator-metal (MIM) capacitors.…”

Section: Resultsmentioning

confidence: 99%

A Novel HBT Frequency Doubler Design for Millimeter-Wave Applications

Johansen

Krozer

Vidkjaer

et al. 2006

2006 International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits

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Abstract-In this paper we present a novel HBT frequency doubler design for millimeter-wave application. HBT frequency doubler theory is described which leads to accurate design equations for improved performance. The developed theory shows that a substantial improvement in the HBT frequency doubler operation can be achieved using a novel second harmonic feedback network. Preliminary measurements on a frequency doubler implemented in a high-speed InP DHBT technology demonstrates an increase in the maximum output power from -14 dBm to -11.5 dBm at an input frequency of 31.4 GHz due to the presence of the second harmonic feedback network. We demonstrate here that the 3 dB improvement in performance is directly due to the feedback mechanism.Index Terms-Coplanar waveguides (CPWs), InP HBT, millimeter-wave frequency doubler, monolithic microwave integrated circuits (MMICs).

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“…An in-house InP/InGaAs self-aligned DHBT technology has been developed [4]. The transistors exhibit a high breakdown voltage (BV CE0 >7 V) as the result of the double heterojunction structure.…”

Section: Technologymentioning

confidence: 99%