MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride

Ga assisted in situ etching of AlGaInAs and InGaAsP multi quantum well structures using tertiarybutylchloride

“…InP etching experiments have shown comparable results with those already reported in literature [9,10]. For [0 1 1] oriented stripes a mesa with well-defined (1 1 1)B sidewalls was developed and no undercut of the mesa was obtained.…”

“…It is possible, with this approach, to avoid defects on the surface, to define a mesa with an appreciable undercut and to overcome the problem of etching Al-containing materials. This solution is already reported in literature [9]. In that case it has been performed on InP substrate and no data have been reported for both standard InGaAsP and AlGaInAs active structures.…”

“…Among different etchant precursors, a wide number of chlorocarbons [2], HCl [3][4][5], and PCl 3 [6] have been successfully used under different etching conditions. More recently tertiarybutylchloride (TBCl) has been adopted first in a CBE [7,8] and later in a MOVPE reactor for the etching of In(GaAs)P materials [9,10]. TBCl is a very attractive etching precursor as it pyrolyses without side reactions in isobutene and isobutane and it is available in optograde purity since it is a starting reagent in the production of tertiarybutylphosphine and tertiarybutylarsine.…”

Etching effect of tertiary-butyl chloride during InP-nanowire growth

“…Tertiary-butyl chloride (TBCl) is also be expected to be useful as an etching agent during NW growth. TBCl etching has already been investigated for selective in-situ etching [21,22] and layer-by-layer growth [23] in MOCVD. The selectivity of the etching in III-V binary compounds has also been investigated [23], which is useful for controlling the composition in NW growth.…”

Selective area etching of InP with CBr4 in MOVPE

“…In situ etching of InP and InP-based alloys using metal organic vapor phase (MOVPE) has been reported using a variety of precursors [1][2][3][4][5][6][7]. The process has been shown to have advantages for improved process yield, reduced interface contamination and improved reliability of InPbased lasers.…”