Mounting of high power laser diodes on diamond heatsinks

Weiss, S.; Zakel, E.; Reichl, H.

doi:10.1109/95.486562

Cited by 32 publications

(3 citation statements)

References 17 publications

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“…To avoid a negative impact of this mismatch on reliability, the heat sink metallization together and the metallization of the devices had to be adapted. A reproducible mounting process for single emitter high power diode lasers at 808 nm on CVD diamond was also presented by Weiß et al [18].…”

Section: Device Structure and Manufacturingmentioning

confidence: 93%

20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power

Sumpf¹,

Fricke²,

Ressel³

et al. 2011

Semicond. Sci. Technol.

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Reliability tests for highly efficient high-power 650 nm broad area diode lasers will be presented. The devices have a 5 nm thick single GaInP quantum well as an active layer, which is embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers. The devices with a stripe width of 100 μm and a cavity length of 1.5 mm were soldered on diamond submounts and mounted on standard C-mounts for an efficient heat removal. The test was performed at a temperature of 15 • C over a first period of 10 000 h at 1.1 W followed by a second period of 10 000 h at 1.2 W. Based on the aging test and assuming a 60% confidence level, the lower limit of the mean time to failure of 87 000 h was determined for the devices.

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Section: Device Structure and Manufacturingmentioning

confidence: 93%

20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power

Sumpf¹,

Fricke²,

Ressel³

et al. 2011

Semicond. Sci. Technol.

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“…It can be placed at the substrate side (Fig. 2b) as proposed in [2]. If using a thermode for reflow soldering this layer sequence has a serious disadvantage which is related to thc heat flow from the thermode upwards to the die: First the AdSn solder will melt, the Au will start to dissolve and the <-phase will grow within the solder upwards to the chip surface.…”

Section: Aumentioning

confidence: 99%

“…Diamond with the best thermal conductivity can be used for laser diodes with a cavity length L 4 0 0 0 p m [2]. In this case the gold rich (-phase must be formed during reflow soldering.…”

Section: Introductionmentioning

confidence: 99%

Mounting of high power laser diodes on boron nitride heat sinks using an optimized Au/Sn metallurgy

Pittroff

Erbert

Beister

et al.

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070)

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High power diode lasers become more and more important to industrial and medical applications. In contrast to low power applications long cavity lasers or laser ban are used in this field and mounting influences considerably laser performance and life time. In this paper we focus on the solder metallurgy and stress-induced laser behavior after mounting.The laser chips have been fluxless bonded epi-side down on translucent cubic boron nitride (T-cBN) using Au/Sn solder. The laser behavior has been tested with different chip metallizations preserving the eutectic solder composition or forming the Au rich (-phase during reflow. The resulting additional stress in the lasing region has been indipendently indicated by polarization measurements of the emitted light.A metallization scheme has been developed which forms the highly melting c-phase during soldering within a wide process window. This procedure yields better results then using eutectic Au/Sn which has a higher hardness than the

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Advanced Packaging of Optoelectronic Devices

Tang

Shi

2013

Wiley Encyclopedia of Electrical and Electronics Engineering

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In recent years, the packaging technologies of advanced optoelectronics devices and systems have evolved rapidly to meet the fast‐growing industry of optoelectronics. However, packaging expense still accounts for a major portion of the overall cost of optoelectronics devices and systems. With the driving trend of higher power, smaller size, and higher reliability, many advanced packaging technologies are emerging. In this article, we present a comprehensive introduction of packaging design rules, advanced packaging materials, and packaging processes. Specific examples with state‐of‐art packaging methodologies are given for some typical devices, including high‐power, light‐emitting diodes; high‐power semiconductor lasers; liquid crystal displays; and fiber‐related optical devices. Insights on the technological development trend and philosophy are also discussed for advanced packaging of optoelectronic devices.

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Mounting of high power laser diodes on diamond heatsinks

Cited by 32 publications

References 17 publications

20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power

20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power

Mounting of high power laser diodes on boron nitride heat sinks using an optimized Au/Sn metallurgy

Advanced Packaging of Optoelectronic Devices

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