Abstract:MOS transistors with very thin oxide (8.5 nm) are concurrently investigated using static I(U), charge pumping, and low frequency noise measurements before and after Fowler‐Nordheim injections. The reliability of the structures is assessed by means of fixed oxide charge, and fast and slow interface trap density variations as a function of stress. The noise characteristics of the devices before and after stress are found to be attributable to carrier number fluctuations. Moreover, it is found that the slow inter… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.