Morphology of gallium phosphide crystals grown by VLS mechanism with gallium as liquid-forming agent

Ellis, W. C.; Frosch, C. J.; Zetterstrom, R. B.

doi:10.1016/0022-0248(68)90044-4

Cited by 28 publications

(8 citation statements)

References 16 publications

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“…This kind of growth was already predicted in the seminal work by Wagner and Ellis: “an excess of one of the component materials can act as a liquid-forming impurity,” the impurity here taking the role of “catalyst” . As an example, Ga or In can be used to assist the growth of GaP, GaAs, and InAs, respectively. ,− A difference here with traditional VLS and VSS is that the catalyst needs to be continuously refilled, otherwise the axial elongation of the nanowire stops. Also here, the thermodynamic phase diagram acts as a guide to determine the growth parameter space.…”

Section: Vapor Phase Growth: a Historical Perspectivementioning

confidence: 92%

Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions

2019

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Nanowires are filamentary crystals with a tailored diameter that can be obtained using a plethora of different synthesis techniques. In this review, we focus on the vapor phase, highlighting the most influential achievements along with a historical perspective. Starting with the discovery of VLS, we feature the variety of structures and materials that can be synthesized in the nanowire form. We then move on to establish distinct features such as the three-dimensional heterostructure/doping design and polytypism. We summarize the status quo of the growth mechanisms, recently confirmed by in situ electron microscopy experiments and defining common ground between the different synthesis techniques. We then propose a selection of remaining defects, starting from what we know and going toward what is still to be learned. We believe this review will serve as a reference for neophytes but also as an insight for experts in an effort to bring open questions under a new light.

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Section: Vapor Phase Growth: a Historical Perspectivementioning

confidence: 92%

Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions

2019

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“…This self-catalyzed technique was first used for the growth of GaP crystals by Ellis et al back in 1968 [67]. After about more than three decades, the self-catalyzed growth was again employed by Fontcuberta i Morral et al, who grew GaAs NWs on GaAs(111)B substrates by MBE [37].…”

Section: Nw Growth Mechanismsmentioning

confidence: 99%

“…To minimize the 2D growth on the oxide mask, the p-shell was grown at 630 °C. However, usually a lower growth temperature is used in the literature [67]. Moreover, the optical quality of radial GaAs shell grown on the side-facets of NWs at low temperature in GaAs/AlGaAs multi-quantum well structures, was reported to have a superior optical quality as compared to those grown at high temperature [190,199].…”

Section: Refinement Of Growth Conditions For Improved Device Performamentioning

confidence: 99%

“…In the present study, an Al 0.33 Ga 0. 67 As segment was grown after the GaAs NW core followed by the solidification of the droplet by supplying only an As 2 flux of 9.0 × 10 −6 Torr for 10 min. Subsequently, an Al 0.33 Ga 0.67 As radial shell of nominal thickness 25 nm was grown by the VS method on the sidewalls of the GaAs core.…”

Section: Paper Vi: Position-controlled Uniform Gaas Nanowires On Silimentioning

confidence: 99%

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Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

et al. 2014

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This thesis deals with the growth of GaAs nanowires (NWs) by molecular beam epitaxy (MBE) using vapor-liquid-solid method on various substrates including GaAs(111)B, Si(111) and graphene. The growth of the NWs on GaAs substrates was carried out by Au-catalyzed technique, whereas the growths on Si and graphene substrates were carried out using self-catalyzed technique that has been the main focus of this thesis. The long-term goal of this work was to produce p-n radial junction GaAs NWs for solar cell applications.Necessary conditions were established for obtaining vertical self-catalyzed GaAs NWs on Si(111), which is reproducible from run-to-run. One of the major issues in these NWs grown by both Au-and self-catalyzed techniques is their crystal structure. The Au-catalyzed GaAs NWs usually adopt a wurtzite (WZ) crystal phase, whereas the self-catalyzed NWs a zinc blende (ZB) phase. However, in both the cases the NWs contain stacking faults, rotational twins or/and a mixed crystal phase. The ZB and WZ phases show different optical properties, and one phase might be favored over other for certain applications. Therefore the crystal phase was controlled within single NWs by tuning the V/III ratio and introducing GaAsSb inserts. The change of the crystal phases was correlated with the change in the contact angle of the Ga droplet.Since the discovery of graphene, an ultra-thin two-dimensional material, the research on graphene has become an active field in recent years due to its remarkable properties including excellent electrical and thermal conductivities, mechanical strength and flexibility, and optical transparency. By growing the semiconductor NWs on graphene, a completely new hybrid system can be envisioned where the unique properties of both NWs and graphene can be utilized. Therefore we established a method for the growth of semiconductor NWs on graphene by demonstrating epitaxial growth of vertical GaAs and InAs NWs on different graphitic substrates.Core-shell heterostructure, doping, optical properties, and position controlled growth of self-catalyzed GaAs NWs were investigated. Growth of GaAs/GaAsSb coreshell NWs where the Sb content was tuned from about 10% -70% was studied. The effect of growth temperature and the Sb flux on the morphology of GaAsSb shell was investigated. In addition, by utilizing the core-shell geometry where the shell copies the crystal phase of the core, WZ phase of GaAsSb was demonstrated. Successful p-type doping of GaAs core using Be as dopant, and n-type doping of GaAs shell using Si and Te as dopants were achieved. To investigate the optical properties, GaAs/AlGaAs coreshell NWs were grown with different V/III ratios during the core growth. The NWs grown with high V/III ratio, despite containing a higher density of twinned ZB and WZ GaAs with SFs, were found to have superior optical quality as compared to the NWs grown with low V/III ratio that contain pure ZB GaAs. The observed V/III ratio dependent optical quality was correlated to the intrinsic defects such as As vac...

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“…While most of the recent efforts were dedicated to finding the optimal conditions for GaAs NW growth, much less is known for the growth of GaP NWs in self-catalyzed VLS processes despite the pioneering work that was published more than five decades ago [ 33 ]. Nevertheless, several recent studies have shed light on GaP NW formation mechanism, including their growth dynamics, and have reported successful self-catalyzed growth of vertical arrays of GaP NWs with the controlled morphology on Si (111) substrates [ 34 , 35 , 36 , 37 ].…”

Section: Introductionmentioning

confidence: 99%

Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

et al. 2021

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Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.

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Morphology of gallium phosphide crystals grown by VLS mechanism with gallium as liquid-forming agent

Cited by 28 publications

References 16 publications

Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions

Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

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