Morphology Control of Two-Dimensional Tin Disulfide on Transition Metal Dichalcogenides Using Chemical Vapor Deposition for Nanoelectronic Applications

Abstract

Two-dimensional (2D) tin disulfide (SnS2) crystals have been arousing immense attentions for flexible electronics and integrated circuits in next generation owing to their earthabundant and non-toxic elemental components. Producing high quality crystal with controlled morphology, however, remains challenging due to the lack of understanding for its growth mechanism. Here, we demonstrate the direct chemical vapor deposition (CVD) growth and morphology control of 2D SnS2 on CVD-grown WS2 layers. In addition to the formation of type II van der Waals (vdW) vertical heterostructures with enhanced charge separation, the morphology of SnS2 is found to be highly dependent on the underlying substrate surface, where lateral growth could be stabilized with epitaxially aligned crystals on the defect-free surface whereas cluster growth appears on the defect-rich surface. This is attributed to the lower energy barrier of migration for adsorbed active species on the defect-free surface, resulting in facilitated surface diffusion compared to the defect-rich surface. The similar results also occur when switching the growth substrates to other 2D transition metal dichalcogenides such as MoS2 layers, showing the importance of defect-free 2D substrates on the SnS2 growth which is crucial for the applications in next-generation nanoelectronics such as photodetector or light emitting diode.

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

“…Precursor engineering is very important in vapor phase deposition as it can affect both the morphology and composition of the final product. Versatile precursors have been developed in CVD or PVD synthesis of GaX (X = S, Se) and SnS 2 , including GaSe, , Ga 2 S 3 , , SnO 2 , , SnCl 4 , SnS, , SnI 4 , SnC 2 O 4 , halide-assisted growth, , etc. Li et al .…”

“…Several other Sn sources have been developed to promote morphology and phase control in the growth of 2D SnS 2 . Chang et al , utilized this phase transition and synthesized 2D SnS 2 crystals with SnS and sulfur as precursors instead of using oxides to reduce the oxygen amount in the growth atmosphere and have demonstrated ultrahigh detectivity as photodetectors (see Figure e,f). Zhou et al selected a low-melting SnI 2 as precursor, which is beneficial for morphology control due to a more stable and uniform growth condition (see Figure g,h).…”

A Comparative Study of the Influence of Nitrogen Content and Structural Characteristics of NiS/Nitrogen-Doped Carbon Nanocomposites on Capacitive Performances in Alkaline Medium

“…So far, the metal sulfides (MSs)-based nanostructures have attracted much attention as one of the promising battery-type electrodes because of their remarkably specific capacitance [ 14 , 15 ]. To ensure their outstanding rate capability, the rational design and synthesis for formulating a series of MSs/carbon nanocomposites by combining various carbonaceous materials have also been reported recently [ 16 , 17 , 18 , 19 ]. The advantages of carbonaceous materials include not only good electronic conductivity but also their availability, light weight, thermal properties, chemical inertness, and so forth [ 20 , 21 , 22 ].…”

Scalable Synthesis of a MoS2/Black Phosphorus Heterostructure for pH‐Universal Hydrogen Evolution Catalysis

“…[7] On account of this, a consensus in the community is to make an vast exposure of the active TMD edge sites to promote the HER process. [8] In the past years, several methods have been testified to effectively boost the catalytic action of TMDs, [9] such as morphological control, [10] defect engineering, [11] and interface engineering. [12] These methods can grant the improvement of HER performance to a certain extent through aggrandizing the exposed S active sites.…”