Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Yang, Lu; Warner, Jamie H.

doi:10.1021/acsaelm.0c00105

Cited by 57 publications

(38 citation statements)

References 284 publications

(562 reference statements)

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“…However, the quantum confinement leads to large exciton binding energy in 2D semiconductors. [ 39 ] This review focuses on photodetection properties that involve excitonic effects and strong light‐matter interaction; therefore, we study the optical bandgap of 2DLMs.…”

Section: Dlms: Candidates For Uv Detectionmentioning

confidence: 99%

“…Vapor phase deposition technique is a bottom–up method that involves the transport of precursors in the vapor phase to the substrate where they are absorbed, followed by nucleation and a controlled growth. [ 39,42 ] This technique overcomes the limitations of exfoliation methods as it provides the advantages of controllability of uniformity and thickness of the flakes. Also, this process is compatible with the current technology and is therefore, suitable for practical applications.…”

Section: Dlms: Candidates For Uv Detectionmentioning

confidence: 99%

“…[ 77,78 ] As shown in Figure 3c, GeS 2 is a low‐symmetry crystal that possesses in‐plane anisotropy, hence anisotropic optical properties. [ 39,67 ] As a result, GeS 2 enjoys a special status in fabricating polarization‐sensitive UV photodetectors. [ 67,76 ] The bandgap for bulk GeS 2 crystal is nearly 3.5 eV.…”

Section: Uv Pds Based On 2dlmsmentioning

confidence: 99%

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2D Layered Materials for Ultraviolet Photodetection: A Review

Kaushik

Singh

2021

Advanced Optical Materials

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2D layered materials (2DLMs) have revolutionized the field of optoelectronics owing to their exceptional properties of strong light–matter interaction, atomic‐level thickness, flexibility, and ability to form van der Waals heterostructures. Most of the research in this area is based on narrow bandgap materials such as transition metal dichalcogenides, which are ideal for fabricating visible and infrared photodetectors. However, utilizing the benefits of 2D materials for the detection of ultraviolet light requires focus on newly emerging wide bandgap 2DLMs. In the present review, an attempt is made to highlight the significance of wide bandgap 2DLMs for fabricating state‐of‐the‐art ultraviolet photodetectors. In this review, first, the fundamentals of photodetectors, including various sensing mechanisms, are discussed. After describing the growth techniques briefly, the readers are introduced to the role of 2DLMs in ultraviolet photodetection based on their bandgap distribution. This is followed by a comprehensive review of the structure, properties and ultraviolet photodetectors based on various 2DLM families including main group metal chalcogenides (GaS, GaSe, GeS2), metal oxides (MoO3), metal halides (PbI2), metal phosphorus trichalcogenides (NiPS3, MnPS3) and hexagonal boron nitride (h‐BN). Finally, the review is summarized and the authors’ perspective is given on the challenges and upcoming development in this field.

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Section: Dlms: Candidates For Uv Detectionmentioning

confidence: 99%

Section: Dlms: Candidates For Uv Detectionmentioning

confidence: 99%

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2D Layered Materials for Ultraviolet Photodetection: A Review

Kaushik

Singh

2021

Advanced Optical Materials

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“…For example, bandgaps of most TMDCs are 1-2 eV [2] and black phosphorus has a thicknessdependent bandgap of 0.3-2.0 eV [16] . For applications like high-power electronics, as well as optoelectronics for emitting, sensing and communication in blue and ultraviolet range [19][20][21][22] , wide bandgap (Eg >2 eV) materials are usually needed. Therefore, it is of interest to explore 2D semiconductors with wide bandgaps.…”

Section: Introductionmentioning

confidence: 99%

Layer‐Dependent Raman Spectroscopy and Electronic Applications of Wide‐Bandgap 2D Semiconductor β‐ZrNCl

Nong

Tan

et al. 2022

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In recent years, two-dimensional (2D) layered semiconductors have received much attention for their potential in next-generation electronics and optoelectronics. Wide-bandgap 2D semiconductors are especially important in blue and ultraviolet wavelength region, while there are very few 2D materials in this region. Here, monolayer β-type zirconium nitride chloride (β-ZrNCl) is isolated for the first time, which is an air-stable layered material with a bandgap of ~3.0 eV in bulk. Systematical investigation of layer-dependent Raman scattering of ZrNCl from monolayer, bilayer, to bulk reveals a blue shift of its out-of-plane A1g peak at ~189 cm -1 . Importantly, this A1g peak is absent in monolayer, suggesting that it is a fingerprint to quickly identify monolayer and for the thickness determination of 2D ZrNCl. The back-gate field-effect transistor based on few-layer ZrNCl shows a high on/off ratio of 10 8 . These results suggest the potential of 2D β-ZrNCl for electronic applications.

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“…Изучение физических процессов в слоистых кристаллах, наиболее известным представителем которых является графит, представляет интерес, в частности, в связи с уникальной кристаллической структурой этих материалов [1]. Отличительным свойством слоистых кристаллов является легкость их механического расщепления по плоскостям, параллельным слоям.…”

Section: Introductionunclassified

Исследование фотофизических свойств нанокомпозита HgI-=SUB=-2-=/SUB=-@mSiO-=SUB=-2-=/SUB=-

Старухин¹,

Нельсон²,

Курдюков³

et al. 2021

Физика Твердого Тела

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The luminescent properties of a composite consisting of mesoporous silica and mercury diiodide nanoparticles formed in silica nanopores have been investigated. The formation of nanoparticles was carried out by evaporation of a HgI2 solution introduced into the SiO2 nanopores. It was found that photoluminescence of the HgI2@mSiO2 composite was due to emission of mercury diiodide, with the emission spectrum being significantly shifted towards shorter wavelengths with respect to the emission spectrum of bulk HgI2 crystals. The shift of the HgI2 emission spectrum to the short-wavelength side is explained by quantum-size effects in the electronic spectra of HgI2 nanoparticles included in the composite. The significant width of the spectrum is explained by its inhomogeneous broadening due to the dependence of the band gap of the nanodots on their size d. The shape of the size distribution function of HgI2 nanodots was estimated and it was shown that it was characterized by a rather narrow maximum at dM = 2.2 nm, which is 2/3 of the diameter of the nanopores in the SiO2 matrix (~3 nm).

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Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Cited by 57 publications

References 284 publications

2D Layered Materials for Ultraviolet Photodetection: A Review

2D Layered Materials for Ultraviolet Photodetection: A Review

Layer‐Dependent Raman Spectroscopy and Electronic Applications of Wide‐Bandgap 2D Semiconductor β‐ZrNCl

Исследование фотофизических свойств нанокомпозита HgI-=SUB=-2-=/SUB=-@mSiO-=SUB=-2-=/SUB=-

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