Monte Carlo simulation of CdTe layers growth on CdTe(0 0 1) and Si(0 0 1) substrates

Pyziak, L.; Stefaniuk, Ireneusz; Virt, І. S.; Kuźma, M.

doi:10.1016/j.apsusc.2003.11.008

Cited by 10 publications

(14 citation statements)

References 18 publications

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“…However, most of the previous theories and simulations of two-component epitaxial growth are based on thermodynamics, without considering the kinetic effects that may also play an important role in controlling the morphology of embedded nanostructures. 9 Zhang et al 10 and Pyziak et al, 11 using kinetic Monte Carlo simulations, studied the kinetic effects of atom diffusions on the morphology of compound films in pulsed laser deposition growth, with a focus on the composition stoichiometry and defect structures.…”

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confidence: 99%

Kinetic Monte Carlo simulations of nanocolumn formation in two-component epitaxial growth

Zheng

Zhu

Gao

et al. 2010

Applied Physics Letters

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Recent experiments have demonstrated that well-ordered one-dimensional column nanostructures can be formed via self-assembly in a variety of two-component epitaxial systems, including diluted magnetic semiconductors and high-TC superconductors. Here we use kinetic Monte Carlo simulations based on a (1+1)-dimensional lattice model to study the morphological evolution of strain-free two-component films during epitaxial growth in the nonequilibrium kinetic regime. Our simulations show that columnlike nanostructures are only formed in the system when the interatomic bond energies EAA, EBB, and EAB satisfy the inequality of EAB⪡(EAA+EBB)/2 at sufficiently high growth temperatures and low deposition rates.

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mentioning

confidence: 99%

Kinetic Monte Carlo simulations of nanocolumn formation in two-component epitaxial growth

Zheng

Zhu

Gao

et al. 2010

Applied Physics Letters

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“…If the deposition conditions are far from optimal ones, the value of the mismatch increases with thickness, as was found for CdTe. 6,7 However for the best conditions, it remains at a low value for all layers. In principle we should allow for the possibility that a given layer contains vacancies; however in our model this has a much higher energy than a wrong atom and so does not occur.…”

Section: Model Of Film Growthmentioning

confidence: 92%

“…These properties result mainly from the fact that atoms have a large kinetic energy ͑0.1-100 eV͒ when they impinge on the substrate, which promotes an increase in the diffusion rate of atoms on the surface. [4][5][6][7] In PLD, the target material is ablated by a pulsed laser and then deposited in pulses on a substrate so that many atoms arrive at the surface simultaneously. Experimentally, each pulse lasts for a few nanoseconds and the time between two pulses is of the order of seconds.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulation of growth of binary bcc structured layers

Zhang

et al. 2008

Phys. Rev. B

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Pulsed laser deposition is a very promising experimental technique for growing layers of nanoscale thickness. In this paper, the growth of a perovskite structured film grown on a perovskite substrate is simulated using the Monte Carlo procedure and LaMnO 3 is taken as an example. In the model, we consider the motion of the La and Mn atoms, and assume the oxygen atoms follow the metal atoms. The quality of the film is controlled by three parameters: namely, the temperature of the substrate, the kinetic energy of the atoms, and the average coverage of each pulse. The simulated results show that the quality of the films is strongly dependent on the three parameters. We analyzed the composition of the films layer by layer and find an interesting phenomenon: if the deposition conditions are not optimal, the fraction of wrong atoms ͑fractional mismatch͒ presents odd-even staggering as the number of deposited atom layers increases.

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“…A multi‐scale Monte Carlo numerical simulation technique has previously been shown as a very powerful tool to simulate ion trajectories in the plasma sheath, in the close proximity of, and inside the nanopores during i‐PVD of arrays of various nanostructures 32–38. In previous studies, we had successfully simulated the i‐PVD of metal ions on the nanostructured template/substrate system made of conducting materials 39.…”

Section: Introductionmentioning

confidence: 99%

Pulsed i‐PVD of Dielectric Nanodot Arrays Using a Nanoporous Template

Zhong

Ostrikov

2009

Plasma Processes & Polymers

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The results of multi‐scale numerical simulations of pulsed i‐PVD template‐assisted nanofabrication of ZnO nanodot arrays on a silicon substrate are presented. The ratios and spatial distributions of the ion fluxes deposited on the lateral and bottom surfaces of the nanopores are computed as a function of the external bias and plasma parameters. The results show that the pulsed bias plays a significant role in the ion current distribution inside the nanopores. The results of numerical experiments of this work suggest that by finely adjusting the pulse voltage, the pulse duration and the duty cycle of the external pulsed bias, the nanopore clogging can be successfully avoided during the deposition and the shapes of the deposited ZnO nanodots can be effectively controlled.

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Monte Carlo simulation of CdTe layers growth on CdTe(0 0 1) and Si(0 0 1) substrates

Cited by 10 publications

References 18 publications

Kinetic Monte Carlo simulations of nanocolumn formation in two-component epitaxial growth

Kinetic Monte Carlo simulations of nanocolumn formation in two-component epitaxial growth

Monte Carlo simulation of growth of binary bcc structured layers

Pulsed i‐PVD of Dielectric Nanodot Arrays Using a Nanoporous Template

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